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pro vyhledávání: '"R.C. Potter"'
Akademický článek
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Autor:
L.T. Tan, K. Tanderup, A. Nappa, P. Petric, I.M. Jürgenliemk-Schulz, M. Serban, J.V. Swamidas, M. Palmu, S.L. Duke, U. Mahantshetty, N. Nesvacil, R.C. Pötter, R.A. Nout
Publikováno v:
Clinical and Translational Radiation Oncology, Vol 29, Iss , Pp 85-92 (2021)
Introduction: In 2020, the ESTRO course on image-guided radiotherapy and chemotherapy in gynaecological cancer was converted into an online version due to the COVID-19 pandemic. This paper describes the change process and evaluates the impact on part
Externí odkaz:
https://doaj.org/article/2dbe63fea32d4287ad4918ec10203bd0
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:697-700
A high-speed analog-to-digital (A/D) converter based on the resonant tunneling diode (RTD) is described. This A/D converter takes advantage of the folding characteristic of the RTD to reduce circuit complexity. The speed of the A/D converter is impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11214e033955c3653d9cef1a32b419a5
https://doi.org/10.1109/4.217986
https://doi.org/10.1109/4.217986
Publikováno v:
IEEE Transactions on Computers. 42:106-109
The use of resonant tunneling diodes (RTDs) in multivalued counters, which greatly simplify the counter circuitry, is described. In order to achieve this implementation, a unique state-dependent current source is used to successively trigger RTD-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc409194cd505d4636f47313d87cf2d
https://doi.org/10.1109/12.192219
https://doi.org/10.1109/12.192219
Publikováno v:
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 39:247-251
Dynamic hysteresis of the resonant tunneling diode (RTD) folding circuit is analyzed. From the study of the dynamic hysteresis effect, the limiting factors for folding-type analog-to-digital (A/D) converters are investigated. A 4-bit A/D converter us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45eb450f97d048c47ffb557e712653b
https://doi.org/10.1109/82.136576
https://doi.org/10.1109/82.136576
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:145-149
A large-signal resonant tunneling diode (RTD) model is used to simulate the performance of a 2-b A/D converter. Results from the theoretical analysis, the breadboard circuit demonstration, and the SPICE3 simulation are discussed. It is shown that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff4e55543b99f662a96907f6a254edac
https://doi.org/10.1109/4.68130
https://doi.org/10.1109/4.68130
Autor:
R.C. Potter, Donna Lee Hodgson
Publikováno v:
Record of Conference Papers Industry Applications Society 52nd Annual Petroleum and Chemical Industry Conference.
Lighting in hazardous (classified) locations poses application challenges in class 1, division 2 areas that require improved temperature classes (T-ratings or T-codes). For instance, oil refineries classify numerous areas with a T3 temperature class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7035852d1e2e940c2002fd28f56d979c
https://doi.org/10.1109/pcicon.2005.1524538
https://doi.org/10.1109/pcicon.2005.1524538
Publikováno v:
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264063391479911d763df5322a7c0097
https://doi.org/10.1109/cornel.1989.79843
https://doi.org/10.1109/cornel.1989.79843
Publikováno v:
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems.
A high-speed A/D (analog-to-digital) converter based on the resonant tunneling diode (RTD) is described. This A/D converter takes advantage of the folding characteristic of the RTD to reduce the circuit complexity. The speed response of the A/D conve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c074c95e475f76a9180454366bcdc702
https://doi.org/10.1109/iscas.1992.230126
https://doi.org/10.1109/iscas.1992.230126
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da556ab229b4bcbfc2bc30d882e287f
https://doi.org/10.1109/iciprm.1993.380629
https://doi.org/10.1109/iciprm.1993.380629