Zobrazeno 1 - 10
of 115
pro vyhledávání: '"R.C. Hanson"'
Publikováno v:
IEEE Transactions on Electron Devices. 41:321-329
Major process issues are investigated to establish a manufacturable process for a 30-GHz f/sub T/ deep-trench isolated submicrometer double polysilicon bipolar technology. A thinner deep-trench surface oxide minimizes crystal defects generated by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc3ec1323724b45d5c01ab30932995f7
https://doi.org/10.1109/16.275216
https://doi.org/10.1109/16.275216
Autor:
G. B. Adams, R.C. Hanson, Donald R. Huffman, Lowell D. Lamb, Jose Menendez, K. Sinha, John B. Page, Otto F. Sankey
Publikováno v:
Chemical Physics Letters. 186:287-290
The Raman excitation profiles for C 60 films grown on silicon reveal the existence of optical transitions near 2.4 eV, well below the lowest dipole-allowed absorption line predicted for isolated icosahedral molecules. These transitions are not observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fddfc4fae7c2951c37c5a193b273cd9
https://doi.org/10.1016/s0009-2614(91)85143-k
https://doi.org/10.1016/s0009-2614(91)85143-k
Autor:
K.F. Lee, S.N. Finegan, R.G. Swartz, V.D. Archer, M.Y. Lau, M.T.Y. Liu, T.-Y. Chiu, M.D. Morris, A.M. Voschenkov, G.M. Chin, Mark D. Feuer, R.C. Hanson
Publikováno v:
IEEE Transactions on Electron Devices. 38:141-150
An optimal device structure for integrating bipolar and CMOS is described. Process design and device performance are discussed. Both the vertical n-p-n and MOS devices have non-overlapping super self-aligned (NOVA) structures. The base-collector and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e095c5366ad643e583ae43391e36763
https://doi.org/10.1109/16.65748
https://doi.org/10.1109/16.65748
Autor:
R.G. Swartz, V.D. Archer, R.C. Hanson, K.F. Lee, G.M. Chin, M.Y. Lau, Mark D. Feuer, A.M. Voshchenkov, S.N. Finegan, M.T.Y. Liu, T.-Y. Chiu, M.D. Morris
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
BiCMOS technology which merges optimal CMOS and bipolar device structure is reported. Based on a nonoverlapping super-self-aligned structure (NOVA), the latest 1.5- mu m CMOS and ECL (emitter-coupled logic) ring oscillators have minimum delays of 110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4e86f7a9216ef5c527ed69c0e7a229
https://doi.org/10.1109/vtsa.1989.68589
https://doi.org/10.1109/vtsa.1989.68589
Autor:
G.M. Chin, T.-Y. Chiu, M.D. Morris, K.F. Lee, R.C. Hanson, V.D. Archer, M.Y. Lau, M.T.Y. Liu, R.G. Swatrz, S.N. Finegan, Mark D. Feuer, A.M. Voshchenkov
Publikováno v:
Technical Digest., International Electron Devices Meeting.
It is demonstrated that high-speed bipolar and CMOS processes can be merged without compromise on either device. A NOVA (nonoverlapping super self-aligned) structure with an advanced epi/isolation process that reduces parasitic capacitances and resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7f0352640f05dab6bdc3c506e5642f
https://doi.org/10.1109/iedm.1988.32921
https://doi.org/10.1109/iedm.1988.32921
Autor:
R.G. Lueck, R. R. Shell, R.C. Hanson, P.L. Donaghay, T. Gagliardi, Edward R. Levine, D.N. Conners
Publikováno v:
Proceedings of Symposium on Autonomous Underwater Vehicle Technology.
The adaptation of synergistic sensor technologies to AUV platforms enables a new class of sampling strategies not available with older technologies. The combined turbulence, optics, and hydrographic data acquisition capabilities can be utilized for n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3ddca3a392bb963ee2892e2144d11c
https://doi.org/10.1109/auv.1996.532442
https://doi.org/10.1109/auv.1996.532442
Publikováno v:
OCEANS 96 MTS/IEEE Conference Proceedings. The Coastal Ocean - Prospects for the 21st Century.
A combination of turbulence, optics, and hydrographic data acquisition from AUVs enables a new class of sampling strategies not available with older technologies, for near-synoptic horizontal mapping of a variety of coastal process studies. Horizonta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::469c92045e536db7767fba2f0fc021ef
https://doi.org/10.1109/oceans.1996.568364
https://doi.org/10.1109/oceans.1996.568364
Autor:
K. Bachman, R.C. Hanson
Publikováno v:
Chemical Physics Letters. 73:338-342
Raman studies on the v1, 2v2 Fermi doublet in solid CO2 up to 100 kbar at ambient temperature show the upper peak to increase and the lower peak to decrease both in intensity and frequency. It is concluded that the bare v1 is above the bare 2v2 at al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ede9aa59356a29cc682dedbaa8fd72
https://doi.org/10.1016/0009-2614(80)80385-x
https://doi.org/10.1016/0009-2614(80)80385-x
Publikováno v:
Solid State Communications. 18:769-772
The temperature dependence of X-ray scattering and Raman scattering in SrCl2 to temperatures above the region of the diffuse transition is reported. The lattice parameter increases quite smoothly with increasing temperature; however the intensity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd981d34aeb13e59146b497e389d744
https://doi.org/10.1016/0038-1098(76)90200-3
https://doi.org/10.1016/0038-1098(76)90200-3
Publikováno v:
Chemical Physics Letters. 140:471-475
Raman spectra of a new solid phase of H 2 S, stable at high pressures and low temperatures, are reported. The number of observed peaks is indicative of a smaller unit cell than phase III that exists at zero pressure and low temperature. The dependenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0897c5e20dff58f73a4d930b61d63b43
https://doi.org/10.1016/0009-2614(87)80471-2
https://doi.org/10.1016/0009-2614(87)80471-2