Zobrazeno 1 - 10
of 97
pro vyhledávání: '"R.C. Eden"'
Autor:
R.C. Eden, P.J. Boudreaux
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:594-604
With high-speed computation now driving with clock rates in the tens of gigahertz, changes have to be made to thermal management and packaging to respond to the increasing power density in such systems. The authors describe one successful approach to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168c20b9272558a671805ba0a232d494
https://doi.org/10.1109/tdmr.2004.838404
https://doi.org/10.1109/tdmr.2004.838404
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:605-613
A study has been conducted to quantify the ability of spray cooling to handle transient die power dissipation, as well as to quantify its effect on device reliability. The transient study was conducted with a bare die thermal test vehicle, while the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4769cb06b935666730946cedf0914024
https://doi.org/10.1109/tdmr.2004.838978
https://doi.org/10.1109/tdmr.2004.838978
Publikováno v:
2008 IEEE Compound Semiconductor Integrated Circuits Symposium.
The DARPA Feedback Linearized Amplifier for RF Electronics (FLARE) Program has demonstrated the world's first microwave operational amplifier with record linearity through the use of strong negative feedback made possible by the large available gain-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e655971532cc9456c8515b43beeecf5c
https://doi.org/10.1109/csics.2008.10
https://doi.org/10.1109/csics.2008.10
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new approach to the design and fabrication of planar high speed GaAs integrated circuits is described. Experimental digital circuits of MSI level complexities have been fabricated showing high gate density, low dynamic switching energies and very h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91dbd393d7cb8ae2e051363b1d3c64ef
https://doi.org/10.1109/mwsym.1979.1124120
https://doi.org/10.1109/mwsym.1979.1124120
Publikováno v:
1988., IEEE International Symposium on Circuits and Systems.
Current commercial GaAs IC technology is reviewed along with IC yield and reliability. Standard digital products and standard-cell ASICs, (application-specific integrated circuits) are described. CRAY-3 GaAs implementation is discussed as a system ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef10a387321e5e7462a841c30ab06438
https://doi.org/10.1109/iscas.1988.15264
https://doi.org/10.1109/iscas.1988.15264
Autor:
R.C. Eden
Publikováno v:
25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..
The intent of this paper is to provide a historical perspective, and understanding in an economic-business context, of how various characteristics of the III-V technologies, as well as those of the competitive silicon IC technologies, acted to define
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb14815bf6d297d515b048162e3b4c0
https://doi.org/10.1109/gaas.2003.1252351
https://doi.org/10.1109/gaas.2003.1252351
Publikováno v:
IEEE Transactions on Electron Devices. 27:2292-2298
The successful development of a new integrated circuit (IC) technology requires a significant effort in process evaluation. This is particularly true for the high-speed low-power planar GaAs digital IC technology, which involves a relatively new semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b621a0bc848c8bd59630c725e3d65e5
https://doi.org/10.1109/t-ed.1980.20268
https://doi.org/10.1109/t-ed.1980.20268
Publikováno v:
IEEE Journal of Solid-State Circuits. 14:221-239
Recent advances in the state of GaAs integrated circuit fabrication technology have made possible the demonstration of ultrahigh performance ( \tau_{d} \sim 100 ps) GaAs digital IC's with up to 64 gate MSI circuit complexities and with gate areas and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a15717287ab24ef026c28f12131090f
https://doi.org/10.1109/jssc.1979.1051169
https://doi.org/10.1109/jssc.1979.1051169
Autor:
P. M. Asbeck, B.M. Welch, G.R. Kaelin, F.S. Lee, R.C. Eden, R. Zucca, C.G. Kirkpatrick, S.I. Long, C-P. Lee
Publikováno v:
Proceedings of the IEEE. 70:35-45
Much interest has been expressed in the use of GaAs MESFET's for high speed digital integrated circuits (IC's). Propagation delays in the 60- to 90-ps/gate range have been demonstrated by several laboratories on SSI and MSI logic circuits. Recently,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e2dbc93de657fdb3fbe2b6f8be2213
https://doi.org/10.1109/proc.1982.12228
https://doi.org/10.1109/proc.1982.12228
Autor:
G.R. Kaelin, S.I. Long, E.K. Shen, B.M. Welch, C.G. Kirkpatrick, P. M. Asbeck, R.C. Eden, R. Zucca, F.S. Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 17:638-647
Multiplication is frequently the speed-limiting function in digital signal processing systems. High-speed hardware multiplier ICs can therefore greatly enhance the throughput and bandwidth of many digital systems. In this paper, the design, fabricati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2864144ff2e37e1027e418b9120c2934
https://doi.org/10.1109/jssc.1982.1051791
https://doi.org/10.1109/jssc.1982.1051791