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Autor:
Al Burk, M.J O'Loughlin, C.D. Brandt, R.C Clarke, M.F MacMillan, Anant K. Agarwal, R.R. Siergiej, S. Sriram, V. Balakrishna
Publikováno v:
Solid-State Electronics. 43:1459-1464
Wide bandgap semiconducting materials are promising candidates for high-power, high-temperature, microwave and optoelectronic devices because of their superior thermal and electrical properties in comparison to conventional semiconductors. Recent dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0ec56264bd2fcc56545ea5057118f7
https://doi.org/10.1016/s0038-1101(99)00089-1
https://doi.org/10.1016/s0038-1101(99)00089-1
Autor:
K.J. Petrosky, P.M. Esker, Eric J. Stewart, G.M. Bates, T.A. Flint, S. Van Campen, T.J. Knight, G.C. De Salvo, R.C. Clarke, J.A. Ostop
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:906-908
There are many commercial applications which require high RF CW power in the kilowatt to megawatt range. To date, these high RF power requirements can only be accomplished by incorporating traveling wave tubes (TWT) or inductive output tubes (IOT). H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d12f00ea0744a2a9387dfcf636510db3
https://doi.org/10.1142/s0129156404003022
https://doi.org/10.1142/s0129156404003022
Publikováno v:
SPE Drilling Engineering. 6:25-30
Summary This paper summarizes the theory of using a practically oriented simulator to assess the mechanical stability of a wellbore in a triaxial, linearly elastic stress field. The model can be used to determine the range of mechanically stable well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::274e84f5bdce789dbd545836aa2b8263
https://doi.org/10.2118/19240-pa
https://doi.org/10.2118/19240-pa
Autor:
T. McNutt, V. Veliadis, E. Stewart, H. Hearne, J. Reichl, P. Oda, S. van Campen, J. Ostop, R.C. Clarke
Publikováno v:
2005 IEEE Vehicle Power and Propulsion Conference.
A new normally-off 4H-silicon carbide (SiC) cascode circuit has been developed capable of offering current densities approaching 500 A/cm/sup 2/. The cascode circuit boasts a specific on-resistance of 3.6 m/spl Omega/cm/sup 2/ and over 1000 V blockin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41d2d75274de8b8c9cb8480eb247ee5e
https://doi.org/10.1109/vppc.2005.1554617
https://doi.org/10.1109/vppc.2005.1554617
Autor:
G.M. Bates, K.J. Petrosky, P.M. Esker, J.A. Ostop, R.C. Clarke, Eric J. Stewart, G.C. De Salvo, T.A. Flint, S. Van Campen, T.J. Knight
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..
There are many commercial applications which require high RF CW power in the kilowatt to megawatt range. To date, these high RF power requirements can only be accomplished by incorporating traveling wave tubes (TWT) or inductive output tubes (IOT). H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9a3468cb9b393197f2156700b8ca3d3
https://doi.org/10.1109/lechpd.2004.1549707
https://doi.org/10.1109/lechpd.2004.1549707
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A method for high-temperature, capless activation of implanted gallium arsenide has been devised based on the recent availability of high-purity semi-insulating PBN LEC gallium arsenide both as implant host and stabilizing medium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::428ff14f98bfec8b3a7ad9b094e578ad
https://doi.org/10.1109/mcs.1983.1151036
https://doi.org/10.1109/mcs.1983.1151036
Autor:
A.K. Agarwal, G. Augustine, V. Balakrishna, C.D. Brandt, A.A. Burk, null Li-Shu Chen, R.C. Clarke, P.M. Esker, H.M. Hobgood, R.H. Hopkins, A.W. Morse, L.B. Rowland, S. Seshadri, R.R. Siergiej, T.J. Smith, S. Sriram
Publikováno v:
International Electron Devices Meeting. Technical Digest.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86952549f18d334d82e879543045de20
https://doi.org/10.1109/iedm.1996.553573
https://doi.org/10.1109/iedm.1996.553573
Publikováno v:
IEEE International Digest on Microwave Symposium.
A novel approach to active phased array technology is described. Several modules are fabricated at the same time and placed in a layered structure. The layers include the RF modules, cooling manifold, DC bias distribution, RF manifold, and radiating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896c44cdc179f3920a6d0c9d7fb4668d
https://doi.org/10.1109/mwsym.1990.99799
https://doi.org/10.1109/mwsym.1990.99799
Autor:
R.C. Clarke
Publikováno v:
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).
Summary form only given. Wide bandgap transistor developments described in this work include CW SiC SITs with output powers at L-band of 16 W/cm, and increased breakdown voltage SITs having a 400 V blocking voltage and 35 W/cm output power. Progress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb878b65ef6d25cdae11f89c34d021f7
https://doi.org/10.1109/bipol.2001.957872
https://doi.org/10.1109/bipol.2001.957872