Zobrazeno 1 - 10
of 160
pro vyhledávání: '"R.B. Laibowitz"'
Publikováno v:
Journal of Materials Research. 9:2566-2573
By depositing thin films under conditions where intensity oscillations are observed in RHEED (reflection high-energy electron diffraction) spots, unit cell level multilayers of SrTiO3/BaTiO3 structures have been grown by pulsed laser ablation. High r
Autor:
R.B. Laibowitz
Publikováno v:
InterSociety Conference on Thermal Phenomena in Electronic Systems.
Summary form only given. Many techniques have been utilized to produce high-quality, high-T/sub c/ superconducting films. These techniques include laser ablation, a variety of sputtering techniques, and electron beam vapor deposition. Molecular beam
Publikováno v:
Solid State Communications. 24:615-618
Using results of tunneling measurements, values of 2Δ(o)/kT c for a number of amorphous transition-metal based superconductors are found to be 3.5±0.1 in agreement with the BCS theory in the weak-coupled limit unlike previously reported results sug
Publikováno v:
Journal of the Less Common Metals. 151:443-449
We report low-temperature irradiation experiments with helium ions (190 keV) on thin YBa2Cu3O7 films 500 nm thick deposited on MgO (100 orientation) substrates. The temperature dependence of the resistance was measured in situ. We analyze the relatio
Publikováno v:
Physics Letters A. 31:133-135
We have observed that the change in 2Δ/kTc from its BCS value of 3.5 is exponentially related to Tc/τD.
Autor:
P.J. Stiles, R.B. Laibowitz
Publikováno v:
Applied Physics Letters. 18:267-269
Small metal particles (SMP) have been incorporated into a multilayered metal‐insulator‐semiconductor structure consisting of thermally oxidized Si, SMP, a second insulator, and a top metal electrode. The SiO2 thickness is kept < 30 A, permitting
Autor:
A. Callegari, P.R. Duncombe, S. Purushothaman, Christos D. Dimitrakopoulos, Deborah A. Neumayer, Jane Margaret Shaw, R.B. Laibowitz, J. Kymissis
Publikováno v:
Scopus-Elsevier
Thin film transistors (TFT) comprising pentacene as the semiconductor layer and an amorphous metal oxide gate insulators with a dielectric constant around 16 were fabricated and tested. Field effect mobility values up to 0.6 cm/sup 2/ V/sup -1/ s/sup
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