Zobrazeno 1 - 10
of 107
pro vyhledávání: '"R.B. Irwin"'
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a891de881dd988f249f5df5968249d0b
https://doi.org/10.1201/9781003069614-38
https://doi.org/10.1201/9781003069614-38
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:1352-1359
A new variation of transmission electron microscopy (TEM) specimen preparation is introduced. By thinning a tall high aspect ratio structure perpendicular to the long dimension (i.e., from the side) rather than from perpendicular to the short dimensi
Autor:
Jiang Huang, Moon J. Kim, Elisabeth Marley Koontz, J.W. Weijtmans, R.B. Irwin, Yuguo Wang, P.J. Jones, P.R. Chidambaram, S. Tang, Rick L. Wise
Publikováno v:
ECS Transactions. 2:541-547
The experimental methodology to characterize the nanoscale local lattice strain in advanced Si CMOS devices by using Focused Ion Beam (FIB) system and Convergent Beam Electron Diffraction (CBED) is discussed. Through both high spatial resolution of T
Publikováno v:
Microscopy Today. 13:26-29
Sample preparation for Transmission Electron Microscopy (TEM) is usually performed such that the final sample orientation is either a cross section or a plan view of the bulk material, as shown schematically in Figure 1. The object of any sample prep
Autor:
Wenyan Li, Clara Rivero, R.B. Irwin, V. Hamel, Gabriel Braunstein, P Sharek, Alfons Schulte, K. Turcotte, Emile J. Knystautas, Kathleen Richardson
Publikováno v:
Thin Solid Films. 425:59-67
Chalcogenide glasses are being investigated for waveguide and integrated optical component applications. In order to advance the novel properties exhibited by these glasses, it is crucial to identify the structure yproperty relationship in both bulk
Autor:
Kathleen Richardson, R.B. Irwin, B Nicolas, K. Elshot, Jochen Fick, Clara Rivero, M Fischer, Réal Vallée
Publikováno v:
Thin Solid Films. 418:215-221
Thin arsenic trisulfide films were deposited by thermal evaporation and thermally activated silver diffusion into these films was studied. UV–vis transmission and Rutherford backscattering spectrometry (RBS) was used for characterization of film pr
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Publikováno v:
Microscopy and Microanalysis. 11
Autor:
R.B. Irwin, Yihwan Kim, C. Machala, M. J. Kim, P.J. Jones, A.T. Kim, P.R. Chidambaram, Douglas T. Grider, Srinivasan Chakravarthi, Antonio L. P. Rotondaro, H. Bu, Brian A. Smith, A.V. Samoilov, Lindsey H. Hall
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
Results from the best reported PMOS transistor at a 37 nm gate length (Lg) built on a process with a recessed SiGe epitaxial layer are discussed. The process details include successful integration of SiGe at the drain extension (DE) location. A highl
Publikováno v:
Microscopy and Microanalysis. 10:1162-1163
Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.