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Autor:
R.B. Gold
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
The microwave industry has been an important component of the San Francisco Bay Area economy for many years. Stanford University, government defense contracts and the parallel development of the semiconductor and computer industry have all played key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f823d7d1ad5e765f307b229a903133ba
https://doi.org/10.1109/mwsym.2006.249907
https://doi.org/10.1109/mwsym.2006.249907
Autor:
R.B. Gold
Publikováno v:
Proceedings., Eighth University/Government/Industry Microelectronics Symposium.
A description is given of the mission and programs of the Massachusetts Microelectronics Center, a partnership of state government, industry, and ten engineering universities. The center supports educational programs in semiconductor design and proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a328f98ed417cd99b5ff540871c328c
https://doi.org/10.1109/ugim.1989.37295
https://doi.org/10.1109/ugim.1989.37295
Publikováno v:
Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium.
The Massachusetts Microelectronics Center (M/sup 2/C), with support from the National Science Foundation, has established the Clearinghouse for Undergraduate Microelectronics Education (CUME) to support VLSI education programs at universities through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54aecaca046f2df5f5c54a94417276c7
https://doi.org/10.1109/ugim.1991.148113
https://doi.org/10.1109/ugim.1991.148113
Autor:
Y.L. Chow, M.E. Read, Phillip Sprangle, T.K. Seshadri, W.T. Wilser, G.A. Juravlev, B.N. Das, M. Miyagi, W.R. Hitchens, F.L. Cain, Kai Chang, V.V. Cherny, J.R. Wait, S. Nishida, R.B. Gold, D.A. Hill, M.H. Keriakos, Kwo Ray Chu, S. Mahapatra, K.K. Joshi, R.H. MacPhie, R.A. Kiehl, E.M. Bastida, A.S. Podgorski, J. Seals, A. K. Ganguly, R. Levy, A.T. Drobot, O. Kitazawa, G. Saulich, K.B. Niclas, Wei-gan Lin, K. Rajaiah, E.C. Burdette, M. Suzuki, John R. Whinnery, Y. Hayashi, M.I. Sobhy, H. H. Szu, Ming Hui Chen, R.L. Ebert
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:435-440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9be375deea544b98e5f5098a5cb92b
https://doi.org/10.1109/tmtt.1980.1130094
https://doi.org/10.1109/tmtt.1980.1130094
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:520-527
Two medium-power 12-18 GHz GaAs FET amplifiers, one single-ended and one balanced, have been developed. A minimum output power across the Ku-band of 200 mW with an associated gain of 4.0 dB was achieved with the balanced module. The transistor used i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39fc83e0894b3f3fa8665de58cdd165
https://doi.org/10.1109/jssc.1978.1051088
https://doi.org/10.1109/jssc.1978.1051088
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:172-179
An X-band GaAs FET power amplifier has been developed, significantly extending the bandwidth capabilities of such amplifiers reported to date. An output power of 1 W with an associated gain of 7.7 dB was achieved from 7.25 to 12.0 GHz by means of com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedd95f682d38879bc9efd29a663d9c0
https://doi.org/10.1109/tmtt.1980.1130037
https://doi.org/10.1109/tmtt.1980.1130037
Autor:
K.B. Niclas, J.B. Beyer, W.R. Hitchens, Y. Ayasli, R.B. Gold, T. Miyoshi, M.W. Scott, K. Morita, M. Aikawa, A. Kaczkowski, K.C. Gupta, G.G. Berry, W.J. Wilson, U. Barabas, J. D. Rhodes, W.T. Wilser, E.F. Kuester, M. Franz, I.J. Bahl, S.A. Alseyab, S. Miyauchi, A. Milewski, H. Ogawa, J.K. ButIer, David C. Chang, T. Tanaka, Bidyut B. Chaudhuri, E.G. Cristal, R.L. Dickman
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:278-281
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a674dcd6ce958c2a30037f18cbe885cb
https://doi.org/10.1109/tmtt.1980.1130061
https://doi.org/10.1109/tmtt.1980.1130061
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:285-294
An ultrawide-band amplifier module has been developed that covers the frequency range from 350 MHz to 14 GHz. A minimum gain of 4 dB was obtained across this 40:1 bandwidth at an output power of 13 dBm. The amplifier makes use of negative and positiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0442a50fc6dd7b8bc9d6548d8860eb1e
https://doi.org/10.1109/tmtt.1980.1130067
https://doi.org/10.1109/tmtt.1980.1130067
Publikováno v:
IEEE Transactions on Electron Devices. 28:607-609
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f405cbb214935f6603760e2df0d74308
https://doi.org/10.1109/t-ed.1981.20396
https://doi.org/10.1109/t-ed.1981.20396