Zobrazeno 1 - 10
of 132
pro vyhledávání: '"R.A. Yankov"'
Autor:
Slawomir Prucnal, I.N. Osiyuk, V. S. Lysenko, R.A. Yankov, Wolfgang Skorupa, I. P. Tyagulskii, Alexei Nazarov, Jiaming Sun, Lars Rebohle, Thoralf Gebel
Publikováno v:
Applied Physics B 87(2007), 129-134
Combined measurements of charge trapping and electroluminescence intensity as a function of injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence (EL) quenching in Ge-implanted ITO-SiO2-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e518f9601558e7df3d93fa56ef722418
https://doi.org/10.1007/s00340-006-2534-1
https://doi.org/10.1007/s00340-006-2534-1
Autor:
Alexei Nazarov, Jiaming Sun, Slawomir Prucnal, I.N. Osiyuk, Wolfgang Skorupa, V. S. Lysenko, I. P. Tyagulskii, R.A. Yankov
Publikováno v:
Journal of Luminescence 121(2006)2, 213-216
This work is a comparative study of the processes of charge trapping in silicon dioxide layers doped with different rare-earth (RE) impurities (Gd, Tb, Er) as well as with Ge. Diode SiO 2 –Si structures incorporating such oxide layers exhibit effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abbbca54fa660d80ecbcad07a57ee7df
https://doi.org/10.1016/j.jlumin.2006.07.014
https://doi.org/10.1016/j.jlumin.2006.07.014
Autor:
Wolfgang Skorupa, A.S. Tkachenko, Thoralf Gebel, I. N. Osiyuk, V. S. Lysenko, Lars Rebohle, Alexey Nazarov, I. P. Tyagulskii, Ja. Vovk, R.A. Yankov
Publikováno v:
Materials Science and Engineering B 124(2005), 458
We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide–silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97fe789f3513369759fde85eca96ebc
https://doi.org/10.1016/j.mseb.2005.08.045
https://doi.org/10.1016/j.mseb.2005.08.045
Publikováno v:
Vacuum. 78:673-677
The paper gives an overview of our recent work in the field of thermal processing of advanced semiconductor structures by millisecond flash lamp annealing (FLA). Topics covered include ultra-shallow junction (USJ) formation and heteroepitaxial growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e4ce4f63915faeff3a7eb2fb91283de
https://doi.org/10.1016/j.vacuum.2005.01.105
https://doi.org/10.1016/j.vacuum.2005.01.105
(AlN)x(SiC)1−x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition
Publikováno v:
Applied Surface Science. 184:383-386
In this work, we present a methodology which enables to optimize the composition x of (AlN) x (SiC) 1-x buried layers implanted in 6H-SiC host material. Our approach is based on the elasticity theory of strained interfaces which successfully predicts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1dd64e91a72caf3ae5fd5096a21539
https://doi.org/10.1016/s0169-4332(01)00522-0
https://doi.org/10.1016/s0169-4332(01)00522-0
Autor:
P.V. Rybin, Joerg Pezoldt, R.A. Yankov, F. Scharmann, Yu. V. Trushin, D. V. Kulikov, M. Voelskow
Publikováno v:
Nuclear Instruments and Methods in Physics Research B 178(2001)1-4, 269-274
A theoretical model is developed which allows to describe the defect evolution in silicon carbide implanted with high doses of nitrogen and aluminium ions and subsequently annealed to form a solid solution. The diffusion of defects, the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17d38e6fd629b8a59c840baa1d8b427d
https://doi.org/10.1016/s0168-583x(00)00476-6
https://doi.org/10.1016/s0168-583x(00)00476-6
Publikováno v:
Applied Surface Science. 149:140-143
6H–SiC n-type wafers were implanted with Al + and N + ions in two ways: first Al + followed by N + and vice versa. The implantation was carried out at four different substrate temperatures between 200 and 800°C. Depth profiles of the defects were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781e4e8173a127423af45f6187629fd9
https://doi.org/10.1016/s0169-4332(99)00189-0
https://doi.org/10.1016/s0169-4332(99)00189-0
Autor:
G Teichert, Wolfgang Skorupa, Dietrich R. T. Zahn, W. Fukarek, M Luebbe, Jörg Pezoldt, R.A. Yankov, T. Werninghaus
Publikováno v:
Diamond and Related Materials. 8:346-351
Using plane-view and cross-sectional Raman spectroscopy, polarized infra-red spectroscopy and photothermal spectroscopy, the structure, composition and internal stress of 6H–SiC crystal implanted sequentially with N+ and Al+ ions to form a (SiC)1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1eb2409cbc060ec1daec8958149357
https://doi.org/10.1016/s0925-9635(98)00307-0
https://doi.org/10.1016/s0925-9635(98)00307-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:96-100
Damage has been observed in MeV-ion-implanted Si away from the maximum of the nuclear energy deposition profile, mainly around the half of the projected ion range, RP/2. Cu gettering has been used for the detection of irradiation defects which are fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b08afdade4cb5ae296dd846cfe52322
https://doi.org/10.1016/s0168-583x(98)00534-5
https://doi.org/10.1016/s0168-583x(98)00534-5
Autor:
R.A. Yankov, Gernot Ecke, P.V. Rybin, Wolfgang Skorupa, W. Fukarek, Jörg Pezoldt, Yu. V. Trushin, D. V. Kulikov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:279-285
This work is an initial attempt to model the fundamental processes that occur when SiC is implanted at elevated substrate temperatures Ti (200°–800°) with high doses of N+ and Al+ ions to synthesise buried layers of (SiC)1 − x(AlN)x. The theore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55a9427675a60ff2cc05695675b7eaec
https://doi.org/10.1016/s0168-583x(98)00608-9
https://doi.org/10.1016/s0168-583x(98)00608-9