Zobrazeno 1 - 10
of 26
pro vyhledávání: '"R.A. Wickstrom"'
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
Monolithic gallium arsenide vertical FETs have been fabricated with a suspended gate, 0.7 /spl mu/m long, and a drain on top of a vertical pillar 4 /spl mu/m high and 0.3 /spl mu/m thick with a doping concentration of 2 x 10 /sup 17/ cm/sup -3/. VFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbce872b6cf268e724134a59b04773f0
https://doi.org/10.1109/cornel.1987.721242
https://doi.org/10.1109/cornel.1987.721242
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
High power, broadband monolithic amplifiers have inherent performance limitations and require specialized fabrication and design techniques to ensure optimal performance and high yield. The "cell cluster matching" design approach is presented as a so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64418316be318d65c37f1d8e4ff1fab
https://doi.org/10.1109/mcs.1983.1151044
https://doi.org/10.1109/mcs.1983.1151044
Autor:
R.E. Neidert, R. Bera, R.A. Soares, Shozo Komaki, D.A. Abbott, M. Fukuta, N.A. Slaymaker, T. Memita, K. Ohata, H. Suzuki, H. Ishikawa, T. Irie, N. Kawamura, H.A. Willing, K. Morita, J.A. Turner, K. Sekido, R.A. Wickstrom, I. Nagasako, L.J. Kuhlman, R.A. PuceI, J.G. Oakes, T. Furutsuka, C.A. Liechti, O. Kurita, Y. Nakayama, D.P. Hornbuckle, K. Suyama, D. Masse, H. Kohzu, M. Ogawa, D.A. Tremere, Terrence M. S. Heng
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 24:387-391
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5bc94e701f679bea4676d4dbb4165b0
https://doi.org/10.1109/tmtt.1976.1128862
https://doi.org/10.1109/tmtt.1976.1128862
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 24:305-311
Vertical MOS silicon power transistors for microwave power applications have been fabricated using an angle evaporation technique to position the gate electrode on the side of a mesa. These devices have produced 3-W output power at 1.5 GHz as a Class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9571a9f4cfd69600ba3064ff5c6ddb1
https://doi.org/10.1109/tmtt.1976.1128847
https://doi.org/10.1109/tmtt.1976.1128847
Publikováno v:
IEEE Transactions on Electron Devices. 14:117-133
A device is described which permits high- Q frequency selection to be incorporated into silicon integrated circuits. It is essentially an electrostatically excited tuning fork employing field-effect transistor "readout." The device, which is called t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::598f3dbeda06c88d099604870da8e9d5
https://doi.org/10.1109/t-ed.1967.15912
https://doi.org/10.1109/t-ed.1967.15912
Autor:
W.E. Newell, R.A. Wickstrom
Publikováno v:
IEEE Transactions on Electron Devices. 16:781-787
The tunistor is a new mechanically resonant device which utilizes piezoelectric film transducers and a free-free flexural mode of resonance. Monolithic silicon tunistors have been demonstrated at frequencies up to 500 kHz with Qs to several thousand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd09e8e5d9d4b9cd0dfab833e6d2ff3
https://doi.org/10.1109/t-ed.1969.16854
https://doi.org/10.1109/t-ed.1969.16854
Publikováno v:
1967 International Electron Devices Meeting.
A new miniature tuning device operating on a flexural resonance of a thin metal substrate has been demonstrated. The device, known as a Tunistor, uses deposited piezoelectric films as input and output transducers, and can be batch fabricated by stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51dee4fc051c4ce074ac1ce2816358dd
https://doi.org/10.1109/iedm.1967.187783
https://doi.org/10.1109/iedm.1967.187783
Publikováno v:
1965 International Electron Devices Meeting.
The use of a suspended clamped-free cantilever beam as the gate electrode for an MOS-type silicon transistor results in a minute, very high Q bandpass filter for integrated circuits. The center frequency of this filter is equal to the mechanical reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a38785a6fe1d5747d79eac563843b2
https://doi.org/10.1109/iedm.1965.187573
https://doi.org/10.1109/iedm.1965.187573
Publikováno v:
IEEE Transactions on Electron Devices. 15:411-412
A new miniature tuning device operating on a flexural resonance of a thin metal substrate has been demonstrated. The device, known as a Tunistor, uses deposited piezoelectric films as input and output transducers, and can be batch fabricated by stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be466fb19944360c39db5f3b3341f462
https://doi.org/10.1109/t-ed.1968.16214
https://doi.org/10.1109/t-ed.1968.16214
Autor:
R.A. Wickstrom, Harvey C. Nathanson
Publikováno v:
IEEE Transactions on Electron Devices. 12:507-507
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f31413e5db547d2e91f8917974769e
https://doi.org/10.1109/t-ed.1965.15583
https://doi.org/10.1109/t-ed.1965.15583