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pro vyhledávání: '"R.A. Minamisawa"'
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Akademický článek
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Akademický článek
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Autor:
Ernst Meyer, Frederic Zanella, Nenad Marjanovic, Thomas A. Jung, Alexander Bubendorf, H. Bartolf, H.R. Rossmann, Marc Schnieper, Jens Gobrecht, R.A. Minamisawa
Publikováno v:
Microelectronic Engineering. 145:166-169
The aim of this study is to combine the UMOSFET design with its U-shape trench-gate architecture which is well-established in silicon technology and benefits from a reduction in cell pitch size as well as from the elimination of the junction-FET regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aad40c2822eac2f51a37693ea97579c6
https://doi.org/10.1016/j.mee.2015.07.002
https://doi.org/10.1016/j.mee.2015.07.002
Publikováno v:
Applied Surface Science. 310:226-229
We prepared multilayers of superlattice thin film system with 50 periodic alternating nano-layers of semiconducting half-Heusler β-Zn 4 Sb 3 and skutterudite CeFe 2 Co 2 Sb 12 compound thin films using ion beam assisted deposition (IBAD) with Au lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f52faecf8460dd5eef9f1c0a6a0b70
https://doi.org/10.1016/j.apsusc.2014.04.026
https://doi.org/10.1016/j.apsusc.2014.04.026
Autor:
R. Luptak, S. Richter, M. Schmidt, Qing-Tai Zhao, Dan Buca, S. Mantl, R.A. Minamisawa, J.M. Hartmann
Publikováno v:
Solid-State Electronics. 71:42-47
Compressively strained Si1−xGex band-to-band tunneling field effect transistors (TFETs) with planar structure are fabricated and analyzed. Different germanium concentrations of x = 0.35, 0.50 and 0.65 are investigated. An HfO2/TiN high-κ/metal gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7889493db94753a523688aeb35d1b976
https://doi.org/10.1016/j.sse.2011.10.018
https://doi.org/10.1016/j.sse.2011.10.018
Autor:
S. Mantl, Qing-Tai Zhao, Konstantin Bourdelle, R.A. Minamisawa, J.M.J. Lopes, Dan Buca, Juergen Schubert, E. Durğun Özben, M. Schmidt, J.M. Hartmann
Publikováno v:
Microelectronic Engineering. 88:2955-2958
Short channel p-type metal-oxide-semiconductor field effect transistors (MOSFETs) with GdScO 3 gate dielectric were fabricated on a quantum well strained Si/strained Si 0.5 Ge 0.5 /strained Si heterostructure on insulator. Amorphous GdScO 3 layers wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea51bafa319f014361956b19c9c7a7c3
https://doi.org/10.1016/j.mee.2011.04.030
https://doi.org/10.1016/j.mee.2011.04.030
Autor:
S. Habicht, S. Mantl, Dan Buca, Lars Knoll, R. Carius, F. Köhler, Qing-Tai Zhao, R.A. Minamisawa
Publikováno v:
Solid-State Electronics. 60:31-36
A systematic study of the impact of As + ion implantation on strain relaxation and dopant activation of biaxially strained SSOI layers and uniaxially strained/unstrained NWs is presented. Three aspects are investigated: (i) the quality of the single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad246b2f15dd1093f552e08c84ea3d0d
https://doi.org/10.1016/j.sse.2011.01.021
https://doi.org/10.1016/j.sse.2011.01.021
Autor:
R.A. Minamisawa, Sadik Güner, D. Ila, B. Zheng, Claudiu Muntele, Cydale Smith, Satilmis Budak
Publikováno v:
Surface and Coatings Technology. 203:2418-2421
We made 50 periodic nano-layers of Si/Ge superlattice films with Au layers deposited on both sides as metal contacts. Each layer is 7.3 nm thick. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115f866a9a4b60d746cbb27bbe2e589c
https://doi.org/10.1016/j.surfcoat.2009.02.031
https://doi.org/10.1016/j.surfcoat.2009.02.031
Publikováno v:
Surface and Coatings Technology. 203:2479-2481
We prepared 50 periodic nano-layers of SiO 2 /Ag x SiO 2(1 − x ) with Au layer deposited on both sides as metal contacts. The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is 10 nm thick. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4309edde164107af4658c254fad314e5
https://doi.org/10.1016/j.surfcoat.2009.02.041
https://doi.org/10.1016/j.surfcoat.2009.02.041