Zobrazeno 1 - 10
of 145
pro vyhledávání: '"R.A. Kiehl"'
Publikováno v:
IBM Journal of Research and Development. 34:506-529
We review work on heterojunction FETs (HFETs) fabricated from III–V compounds, with emphasis on the unique properties of such devices and their applicability to high-speed logic circuits. After discussing their general properties, including their u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb30caddc7bdfe5903eb0874b6c6bdb8
https://doi.org/10.1147/rd.344.0506
https://doi.org/10.1147/rd.344.0506
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52cc374758ecb3c84aef59e10ebd7e7b
https://doi.org/10.1109/cornel.1987.721223
https://doi.org/10.1109/cornel.1987.721223
Autor:
R.A. Kiehl, D.M. Drury
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new microwave switch that uses lightwaves to couple microwave energy between its ports is shown to offer outstanding performance in terms of on/off ratio and reverse isolation while exhibiting a state independent input impedance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf067a48f056627e512136a506fa0efc
https://doi.org/10.1109/mwsym.1980.1124271
https://doi.org/10.1109/mwsym.1980.1124271
Publikováno v:
Technical Digest., International Electron Devices Meeting.
Heterostructure design and device fabrication techniques in GaAs/AlGaAs for vertically integrated p- and n-channel quantum-well FETs are described, and the operation of FETs fabricated on a p/n double-quantum-well heterostructure is demonstrated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09439c1a5952cb14aa933c273ba98e3
https://doi.org/10.1109/iedm.1988.32905
https://doi.org/10.1109/iedm.1988.32905
Autor:
R.A. Kiehl
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.
The search for circuitry that is not bound by the limits of conventional technologies has lead to research on a variety of radically different approaches to future electronics. The basic idea behind this work is to exploit physical effects in structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::541a6008dd6f200643f6591d14446de5
https://doi.org/10.1109/isscc.1994.344705
https://doi.org/10.1109/isscc.1994.344705
Autor:
R.A. Kiehl
Publikováno v:
Proceedings Workshop on Physics and Computation. PhysComp '94.
A perspective of the research activities in Japan aimed at the development of new computing technologies based on structures with ultra-small dimensions is presented. Examples are given of work toward the development of resonant tunneling circuits, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e1f6940f57d42096f74a83028f155c6
https://doi.org/10.1109/phycmp.1994.363706
https://doi.org/10.1109/phycmp.1994.363706
Autor:
Thomas N. Jackson, Steven L. Wright, L. F. Palmateer, David J. Frank, J.F. DeGelormo, J. Yates, R.A. Kiehl, A. J. Fleischman
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
A III-V complementary heterostructure FET circuit technology which offers high-speed at low supply voltages has been demonstrated. This circuit technology is based on the vertical integration of p-channel quantum-well FETs with n-channel FETs fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bb1c575d97aa561caf859715ac25363
https://doi.org/10.1109/gaas.1991.172644
https://doi.org/10.1109/gaas.1991.172644
Publikováno v:
1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).
Quantum mechanical (QM) effects, which manifest when the device dimensions are comparable to the de Broglie wavelength, are becoming common physical phenomena in the current micro-/nano-meter technology era. While most novel devices take advantage of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8826c2271dae3ec682cdf3111ca0176d
https://doi.org/10.1109/iwce.1998.742752
https://doi.org/10.1109/iwce.1998.742752
Autor:
R.A. Kiehl, Hossam A. H. Fahmy
Publikováno v:
ICM'99. Proceedings. Eleventh International Conference on Microelectronics (IEEE Cat. No.99EX388).
This paper presents the work done to develop and characterize the behavior of binary tunneling phase logic (TPL) devices. Three input NAND, NOR and MINORITY functions are demonstrated using a single TPL element. The fan-out of the gates is discussed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50bcb609d4573dbd63f499ad3849df3
https://doi.org/10.1109/icm.2000.884828
https://doi.org/10.1109/icm.2000.884828
Publikováno v:
IEEE Electron Device Letters. 12:530-532
The fabrication and electrical characteristics of p-channel AlGaAs/GaAs heterostructure FETs with self-aligned p/sup +/ source-drain regions formed by low-energy co-implantation of Be and F are reported. The devices utilize a sidewall-assisted refrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::957b641fc9be504489406c0af1260a09
https://doi.org/10.1109/55.119179
https://doi.org/10.1109/55.119179