Zobrazeno 1 - 10
of 65
pro vyhledávání: '"R.A. Bianchi"'
Autor:
S. Rink, V. Quenette, J.R. Manouvrier, A. Juge, G. Gouget, D. Rideau, R.A. Bianchi, D. Golanski, B. Mamdy, J.B. Kammerer, W. Uhring, C. Lallement, S. Pellegrini, M. Agnew, B. Rae
Publikováno v:
ESSDERC 2022, Milan, Italy, octobre 2022
ESSDERC 2022, Milan, Italy, octobre 2022, Oct 2022, Milan, Italy
ESSDERC 2022, Milan, Italy, octobre 2022, Oct 2022, Milan, Italy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::254ad393365e9e07d63b155b1c073223
https://hal.science/hal-03799502
https://hal.science/hal-03799502
Autor:
Sylvain Joblot, Magali Gregoire, Marc Juhel, Alexia Valéry, R.A. Bianchi, E. Ghegin, Remi Vallat, J. Borrel
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
Until the 90-nm node, CoSi 2 silicide have been widely used in semiconductor industry. More recently, in order to meet performance requirements in advanced digital nodes, process integration have consensually shifted towards NiPt-based silicides [1]
Autor:
Gerard Ghibaudo, G. Bidal, Flore Kergomard, A. Bajolet, Antoine Cros, Cheikh Diouf, Julien Rosa, R.A. Bianchi, Lama Rahhal
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩
Solid-State Electronics, Elsevier, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩
In this work, P-MOS transistors of advanced bulk technology integrating high K/metal gate and SiGe channel are considered. An exhaustive study of threshold voltage (Vt), current gain factor (β), and drain-current (Id) mismatches with different Ge pr
Autor:
Gerard Ghibaudo, Charalabos A. Dimitriadis, J. Jomaah, R.A. Bianchi, E. G. Ioannidis, Sebastien Haendler
Publikováno v:
Solid-State Electronics. 76:54-59
Extensive investigation of the low-frequency noise in n-channel and p-channel MOSFETs, with high-k gate stack and channel length varying from 1.8 μm down to 26.4 nm, has been carried out. The results demonstrate that the carrier number fluctuation w
Autor:
P. Caubet, P. Normandon, C. Leroux, Mickael Gros-Jean, Gerard Ghibaudo, Roland Pantel, R.A. Bianchi, R. Boujamaa, S. Baudot, S. Zoll, Magali Gregoire
Publikováno v:
Microelectronic Engineering. 88:569-572
The MOSFET gate length reduction down to 32nm requires the introduction of a metal gate and a high-K dielectric as gate stack, both stable at high temperature. Here we use a nanometric layer of Lanthanum to shift the device threshold voltage from 500
Publikováno v:
IEEE Transactions on Electron Devices. 52:2769-2775
A novel dynamic gate capacitance characterization technique is proposed to evaluate switching losses in power devices. Dynamic gate capacitance is obtained by measuring the gate displacement current due to the application of a controlled gate voltage
Autor:
R.A. Bianchi, E. Robilliart, G. Reimbold, C. Raynaud, C. Gallon, R. Gwoziecki, Gerard Ghibaudo, H. Dansas, S. Orain
Publikováno v:
IEEE Transactions on Electron Devices. 51:1254-1261
This paper presents an electrical analysis of mechanical stress induced by shallow trench isolation (STI) on MOSFETs of advanced 0.13 /spl mu/m bulk and silicon-on-insulator (SOI) technologies. By applying external calibrated stress, we present piezo
Publikováno v:
Solid-State Electronics. 48:561-566
This paper presents an electrical analysis of external mechanical stress effects on devices characteristics for long and short channel MOSFETs in advanced 0.13 μm technology. Similar bulk and SOI generations for nMOS and pMOS devices are studied. By
Publikováno v:
IEEE Journal of Solid-State Circuits
IEEE Journal of Solid-State Circuits, Institute of Electrical and Electronics Engineers, 2000, 35(1); Janv. 2000, pp.2-14. ⟨10.1109/4.818915⟩
IEEE Journal of Solid-State Circuits, Institute of Electrical and Electronics Engineers, 2000, 35(1); Janv. 2000, pp.2-14. ⟨10.1109/4.818915⟩
Fundamental mode and third-harmonic mode integrated high-performance automatic level controlled (ALC) crystal oscillators for high-temperature applications (up to 250/spl deg/C), are described in this paper. These oscillators were designed for a pres
Publikováno v:
Microelectronics Journal
Microelectronics Journal, Elsevier, 1998, September 1998, pp.627-636. ⟨10.1016/S0026-2692(98)00026-3⟩
Microelectronics Journal, Elsevier, 1998, September 1998, pp.627-636. ⟨10.1016/S0026-2692(98)00026-3⟩
The properties, characteristics, applications and sensing principles of most of the present-day integrated smart temperature sensors are discussed in this paper. A CMOS process-compatible temperature sensor developed for low-cost high-volume integrat