Zobrazeno 1 - 10
of 27
pro vyhledávání: '"R.A. Augur"'
Publikováno v:
Journal of Applied Physics. 79:3003-3010
Significant large‐scale modification of the surface of Al–Si conductors was observed, due to electromigration in wide lines and under low stress conditions. After electromigration stressing the Al layers showed local thickness variations, i.e., d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b328dc95d95757743aae6b01d12db11
https://doi.org/10.1063/1.362653
https://doi.org/10.1063/1.362653
Publikováno v:
Applied Surface Science. 91:197-207
The causes of stress voiding and electromigration in aluminum alloys are reviewed. An overview of characterization techniques is given along with some simulation results on the influence of line geometry on the mechanical stress. Stress voiding and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3b3a6d44ca7e0315c341d3b44a061c
https://doi.org/10.1016/0169-4332(95)00119-0
https://doi.org/10.1016/0169-4332(95)00119-0
Publikováno v:
Thin Solid Films. 246:164-171
In this paper new data on highly reliable interconnect materials based on aluminium will be presented. Compared with AlSiCu alloy films, alternative alloys such as AlSiV and AlSiVPd combine excellent plasma etchability with good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d84adf174af7eff2410d762dfe2fe8
https://doi.org/10.1016/0040-6090(94)90746-3
https://doi.org/10.1016/0040-6090(94)90746-3
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 15:97-102
A technique for fabricating multichip modules (MCMs) by mounting chips in holes etched into silicon motherboards is described. With this approach the front faces of the chips are coplanar with the front of the motherboard, and, hence, the connections
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15f48042e7b14300715e19277e82718
https://doi.org/10.1109/33.124197
https://doi.org/10.1109/33.124197
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
1/f noise measurements of n and p MOSFETs and interconnects are presented in a masterplot. This plot of noise power density, S/sub p/ versus power per charge, P/Q can compare large families of different noise sources. The masterplot comes from our ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d406c1dab59c0e8c8cecd02a7e1c9eee
https://doi.org/10.1109/iedm.1994.383436
https://doi.org/10.1109/iedm.1994.383436
Autor:
F.A.M. Op den Buijsch, R.A. Augur, C.N.A. Aussems, Pierre H. Woerlee, L.W.M. Dingen, P.A. van der Plas, R. de Werdt, W.J.M. Havermans, Tom C. T. Geuns, H.G. Pomp, Andreas H. Montree, N.A.H. Wils, M. Vertregt, L. de Bruin, Robertus D. J. Verhaar
Publikováno v:
International Technical Digest on Electron Devices.
The authors describe a 25.2 mu m/sup 2/ bulk full CMOS SRAM cell for application in high-density static memories fabricated in a 14-mask process using minimum dimensions of 0.5 mu m at a comparatively relaxed 1.2 mu m pitch. A very aggressive n/sup +
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e77b4ddc4c291039a48a8123430ba46
https://doi.org/10.1109/iedm.1990.237065
https://doi.org/10.1109/iedm.1990.237065
Publikováno v:
MRS Proceedings. 391
The influence of a TiW barrier layer on the stress-voiding behavior of AlCu and AlSiCu interconnects is investigated. The results are compared to the same alloys deposited on SiO2- In both cases, AlCu exhibits a notably better voiding behavior compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e939f103737b5ace0b1962365facf06
https://doi.org/10.1557/proc-391-473
https://doi.org/10.1557/proc-391-473
Publikováno v:
MRS Proceedings. 391
This paper presents new results concerning diffusion at the interface between Al and its oxide, due to electromigration in Al interconnects. The results show that the phenomenon is an important and general one. Significant large-scale modification of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e59c1964ec146e2d96074d22acda1198
https://doi.org/10.1557/proc-391-259
https://doi.org/10.1557/proc-391-259
Publikováno v:
MRS Proceedings. 338
The electromigration lifetime of Al-Si (1 at.% Si) can be greatly increased by alloying with V and Pd (0.1 at.% V, 0.1 at.% Pd). This study reports on l/fα (α≈l) noise measurements in Al-Si, Al-Si-V and Al-Si-V-Pd alloy films. Samples were prepar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419ad0873cd2ad03396ab2c1d5987b5a
https://doi.org/10.1557/proc-338-483
https://doi.org/10.1557/proc-338-483
Publikováno v:
MRS Proceedings. 337
Difficulty during plasma etching and post-etch corrosion are major drawbacks of Al-Si-Cu alloy films, when used for integrated circuit interconnect. Moreover, the relatively large solute mobility of Cu in Al may lead to void formation by precipitate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91f7be9bf3f0b9ac2589a62a22b41844
https://doi.org/10.1557/proc-337-237
https://doi.org/10.1557/proc-337-237