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Autor:
Palani, Indirajith1 (AUTHOR), Nguyen, Duyen Thi1 (AUTHOR), Kim, Jongchan2 (AUTHOR), Nguyen, Quang Khanh1 (AUTHOR), Nguyen, Long Van1 (AUTHOR), Song, Da Som3 (AUTHOR), Lim, Jong Sun3 (AUTHOR), Kim, Chang Gyon3 (AUTHOR), Cho, Kyeongjae2 (AUTHOR) kjcho@utdallas.edu, Sung, Myung Mo1 (AUTHOR) smm@hanyang.ac.kr
Publikováno v:
Small Structures. Oct2024, Vol. 5 Issue 10, p1-8. 8p.
Publikováno v:
Physical Review B. 62:4501-4510
Infrared reflectivity measurements ~200–5000 cm) and transmittance measurements ~500–5000 cm) have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum
Autor:
Jan Petzelt, M. P. Moret, V. Porokhonskyy, Zoe H. Barber, S. Kamba, Ashish Garg, R. Zallen, Jan Pokorny
Publikováno v:
Applied Physics Letters. 81:1056-1058
Polarized microscope observation of ferroelastic domains in a SrBi2Ta2O9 (SBT) single crystal reveals the presence of domains up to Tc1≃770 K, which supports the ferroelasticity and Amam symmetry of the intermediate phase between ferroelectric and
Autor:
Guo, Jing1 (AUTHOR) janiceguo@njucm.edu.cn, Li, Li2 (AUTHOR) lilihn@njucm.edu.cn, Chen, Feiyi2 (AUTHOR) fy_feiyichen@njucm.edu.cn, Fu, Minhan2 (AUTHOR) 039318118@njucm.edu.cn, Cheng, Cheng1 (AUTHOR) chengcheng@njucm.edu.cn, Wang, Meizi1 (AUTHOR) meiziwang@njucm.edu.cn, Hu, Jun1 (AUTHOR) junhu@njucm.edu.cn, Pei, Lixia2 (AUTHOR) fsyy00663@njucm.edu.cn, Sun, Jianhua2 (AUTHOR) fsyy00663@njucm.edu.cn
Publikováno v:
Biomolecules (2218-273X). Jul2024, Vol. 14 Issue 7, p804. 18p.
Publikováno v:
Semiconductor Science and Technology. 7:1149-1154
Raman scattering by coupled plasmon-phonon modes is studied with Si-doped InAs epilayers grown by MBE with carrier concentrations from 7.5*1017 cm-3 to 4*1019 cm-3. Unexpectedly, an unscreened LO line is observed throughout the whole carrier concentr
Autor:
A. G. de Oliveira, A. G. Norman, Ian T. Ferguson, Y B Li, S S Dosanjh, R A Stradling, R Zallen
Publikováno v:
Semiconductor Science and Technology. 7:567-570
Phonon energies in InAs1-xSbx ternary alloys, grown on GaAs by molecular beam epitaxy, have been studied by Raman scattering. The microstructure for this alloy system depends strongly on the growth temperature. For growth temperatures above 400 degre
Autor:
GOYAL, MONIKA1 monika.goyal@gla.ac.in
Publikováno v:
High Temperatures - High Pressures. 2024, Vol. 53 Issue 3, p201-217. 17p.
Autor:
Pulzara-Mora, Camilo1, Doria-Andrade, José2, Bernal-Correa, Roberto3, Rosales-Rivera, Andrés4, Pulzara-Mora, Álvaro1 aopulzaram@unal.edu.co
Publikováno v:
Digest Journal of Nanomaterials & Biostructures (DJNB). Apr-Jun2024, Vol. 19 Issue 2, p669-677. 9p.
Autor:
Li, Jixiang1 (AUTHOR), Masghouni, Emna1 (AUTHOR), Granger, Mathis2 (AUTHOR), Sudre, Guillaume3 (AUTHOR), Alcouffe, Pierre3 (AUTHOR), Muller, Didier4 (AUTHOR), Nguyen, Van Son4 (AUTHOR), Bayard, Bernard2 (AUTHOR), Serghei, Anatoli3 (AUTHOR), Sauviac, Bruno2 (AUTHOR), Maazouz, Abderrahim1,5 (AUTHOR), Lamnawar, Khalid1 (AUTHOR) khalid.lamnawar@insa-lyon.fr
Publikováno v:
Macromolecular Materials & Engineering. Apr2024, Vol. 309 Issue 4, p1-31. 31p.