Zobrazeno 1 - 10
of 69
pro vyhledávání: '"R. Wollrab"'
Autor:
W. Schirmacher, H. Lutz, Rainer Breiter, J. Wenisch, D. Eich, H. Figgemeier, Stefan Hanna, R. Wollrab
Publikováno v:
Journal of Electronic Materials. 44:3002-3006
Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent
Publikováno v:
International Conference on Space Optics — ICSO 2014.
To push HOT-performance, AIMs existing n-on-p technology has been improved by introducing Gold as an acceptor and reducing its concentration to the lower 10 15 /cm 3 range as well as by optimizing the passivation process. This results in a substantia
Autor:
D. Eich, H. Lutz, P. Fries, Rainer Breiter, H. Figgemeier, R. Wollrab, J. Wenisch, Johann Ziegler
Publikováno v:
Journal of Electronic Materials. 43:2935-2940
In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-
Publikováno v:
Journal of Electronic Materials. 43:2778-2782
Significant improvements of HgCdTe (MCT) detectors for the midwave infrared (MWIR) region with cutoff wavelength of about 5.2 μm at 77 K have been achieved. Optimizing the CdTe passivation proved to be a decisive step towards higher operating temper
Autor:
H. Bitterlich, J. Wenisch, Rainer Breiter, P. Fries, R. Wollrab, J. Wendler, Johann Ziegler, M. Bruder
Publikováno v:
Journal of Electronic Materials. 42:3186-3190
Due to continuous improvement of traditional liquid-phase epitaxy n-on-p technology, excellent mid-wavelength infrared HgCdTe (MCT) detectors with 1280 × 1024 pixels and 15 μm pitch size have been produced at AIM. At an operating temperature (TOP)
Publikováno v:
Journal of Electronic Materials. 41:2828-2832
Driven by the need for more efficient and cost-effective production of infrared (IR) detectors as well as the demands for novel (third-generation) device concepts, a large amount of effort has been spent on the development of molecular beam epitaxy (
Autor:
A. Bauer, Johann Ziegler, K.-M. Mahlein, H. Bitterlich, R. Wollrab, Stefan Hanna, T. Schallenberg, H. Lutz, M. Bruder
Publikováno v:
Journal of Electronic Materials. 40:1618-1623
Mainly driven by space applications, mercury cadmium telluride (MCT) focal-plane arrays (FPAs) have been successfully developed for very long wavelengths (λCO > 14 μm at 55 K). For this purpose, the standard n-on-p technology based on MCT grown by
Autor:
Johann Ziegler, H. Lutz, K.-M. Mahlein, R. Wollrab, Stefan Hanna, J. Wenisch, M. Bruder, D. Eich, A. Bauer, H. Bitterlich
Publikováno v:
Journal of Electronic Materials. 39:846-851
In recent years AIM has expanded its portfolio of standard infrared (IR) focal-plane arrays in the 3 μm to 5 μm (mid-wavelength infrared, MWIR) and 8 μm to 10 μm (long-wavelength infrared, LWIR) spectral ranges with two-dimensional IR detectors,
Autor:
M. Finck, Wolfgang A. Cabanski, J. Wendler, Robert Rehm, Werner Rode, Johannes Schmitz, D. Eich, Joachim Fleißner, R. Wollrab, Markus Walther, Frank Fuchs, Johann Ziegler
Publikováno v:
Journal of Electronic Materials. 34:722-725
An infrared camera based on a 256×256 focal plane array (FPA) for the second atmospheric window (3–5 µm) has been realized for the first time with InAs/GaSb short period superlattices (SLs). The SL detector structure with a broken gap type-II ban
Publikováno v:
Journal of Electronic Materials. 32:588-591
HgCdTe detector performance and yield are strongly dependant on CdZnTe substrate and HgCdTe epilayer properties, and on key device processes, especially for 8–12 µm application. Due to the correlation and optimization between these figures and dio