Zobrazeno 1 - 10 of 56 pro vyhledávání: '"R. W. Vook"'
1
Epitaxial bilayer growth of CaF2(111)/Pd(111) on CaF2(111) substrates
Autor: B. H. Jo, R. W. Vook
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1044-1047
Epitaxial Pd(111) films were grown in UHV on air‐cleaved CaF2(111) substrates. Subsequently, epitaxial CaF2(111) films were grown on top of the Pd layer. All films were grown by vacuum evaporation techniques. The growth conditions, structure, and s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2762df1ad548eaa68199d6b63fc1bc9
https://doi.org/10.1116/1.578438
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3
Hydrogen storage, microstructural properties of, and electromigration effects in Al/Pd/Al films
Autor: R. W. Vook, A. Domenicucci
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:581-585
Composite Al/Pd/Al films were thermally evaporated onto SiO2 in an ultrahigh vacuum environment. The thickness of the Pd layer was varied in the range of 0–66 A. The Pd layer was exposed to various partial pressures of H2 in situ. Secondary ion mas
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6dadd31b82cf6f48d3a731ac89066afe
https://doi.org/10.1116/1.577368
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4
Topography and microstructure of Al films formed under various deposition conditions
Autor: R. W. Vook, C. Y. Chang
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:559-562
Al films were vapor deposited in high vacuum onto SiO2/Si substrates at various substrate temperatures (T) and deposition rates (R) which ranged, respectively, from 24 to 250 °C and from 2 to 90 A/s. The films were examined by scanning electron micr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f76cde462b35225fe62f18b8ee615857
https://doi.org/10.1116/1.577409
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5
Microstructural characterization of YBaCuO thin films deposited by rf magnetron sputtering as a function of annealing conditions
Autor: R. W. Vook, John P. Allen, M. Ece
Publikováno v: Journal of Materials Research. 6:252-263
Thin films of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} have been prepared on MgO, SrTiO{sub 3}/Al{sub 2}O{sub 3}, and Al{sub 2}O{sub 3} substrates by rf magnetron sputtering. A buffer layer of SrTiO{sub 3} was deposited on Al{sub 2}O{sub 3}
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6a2052f84be1eb76f36fe5469c386d3
https://doi.org/10.1557/jmr.1991.0252
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6
Growth mode determinations for the epitaxial Cu/Pd(111)/mica and Pd/Cu(111)/mica thin film systems
Autor: B. Oral, R. W. Vook
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3048-3051
The growth of Cu on epitaxially grown Pd(111)/mica and the growth of Pd on epitaxially grown Cu(111)/mica surfaces were studied with Auger electron spectroscopy (AES) and low‐energy electron diffraction (LEED) under UHV conditions. The results show
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a7d23dc737eee9e5cbe413f3dce3f975
https://doi.org/10.1116/1.576628
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7
Activation energy for electromigration in Cu films
Autor: R. W. Vook, C. W. Park
Publikováno v: Applied Physics Letters. 59:175-177
Copper is a possible substitute for Al in very large scale integration interconnects because of its higher resistance to electromigration damage (EMD) and its lower electrical resistivity. In the present work, we report on electrical resistance measu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::954912c11a863225f77c91f2c27d34f4
https://doi.org/10.1063/1.106011
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8
In-Situ UHV Electromigration in CU Films
Autor: B. H. Jo, R. W. Vook
Publikováno v: MRS Proceedings. 428
Copper stripes, current stressed under UHV, clean surface conditions, have an activation energy Q for electromigration (EM) of 0.5 eV, significantly lower than the 0.8 eV reported when the surface has been exposed to air. Application of positive or n
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ed57f74e44000f2e6f3069afb49e99d
https://doi.org/10.1557/proc-428-31
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9
In-Situ TEM Observation of Electromigration Damage by Surface or Interface Diffusion in Al and Al Alloy Films
Autor: R. W. Vook, C. Y. Chang
Publikováno v: MRS Proceedings. 225
In-situ transmission electron microscope (TEM) electromigration damage (EMD) tests were performed on pure Al films which were thermally evaporated onto oxidized silicon wafers under different deposition conditions. Three different aluminum alloy film
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8c905ccc6ea2bbdc1b8da3e237bd528
https://doi.org/10.1557/proc-225-125
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10
The Kinetics of Electromigration Damage in Copper Films Studied by Isothermal Resistance Change Analysis
Autor: C. W. Park, R. W. Vook
Publikováno v: MRS Proceedings. 225
Electromigration damage is one of the primary causes of the failure of interconnects in VLSI circuits. In this work, the response of Cu films to electromigration stress has been studied by an isothermal electrical resistance method. Accurate temperat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b7046901b78d54b61f0329a783e6aa21
https://doi.org/10.1557/proc-225-119
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