Zobrazeno 1 - 10 of 18 pro vyhledávání: '"R. W. Streater"'
1
Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates
Autor: D.A. Macquistan, C.J. Miner, Glen Hillier, A. Majeed, D. Beckett, I.C. Bassignana, R. W. Streater
Publikováno v: Journal of Crystal Growth. 178:445-458
Variations in the lattice parameter and crystal quality of commercially available GaAs (n-type, Si: 1−7 × 1018 cm−3 substrates have been studied by high-resolution X-ray diffraction (HRXRD) and asymmetric crystal topography (ACT). Crystals grown
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8163f25719cd81a99331f5b2105ff72d
https://doi.org/10.1016/s0022-0248(97)00009-2
Zobrazit plný text záznamu
2
Iodine-assisted molecular beam epitaxy
Autor: M. Micovic, W. Z. Cai, R. W. Streater, A.J. SpringThorpe, David L. Miller, Dmitri Lubyshev, F. Flack
Publikováno v: Scopus-Elsevier
Iodine was introduced into our solid source molecular beam epitaxy chamber during the growth of GaAs and AlGaAs layers and strained-layer InGaAs quantum wells. Photoluminescence spectra of these samples taken at 4.2 K were compared to spectra from a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a773fbcac53b61fb6f3e4c69cec13b5e
https://doi.org/10.1016/s0022-0248(96)00818-4
Zobrazit plný text záznamu
3
Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers
Autor: D.A. Macquistan, R. Packwood, Glen Hillier, I.C. Bassignana, R. W. Streater, V. Moore
Publikováno v: Journal of Crystal Growth. 172:25-36
A review of the existing literature shows that the accuracy with which the Al composition of a coherent Al x Ga 1−x As GaAs heteroepitaxial layer can be determined from the lattice parameter difference between it and the substrate has been a topic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a83cbf9c7b1c693f287a4a21c902bde1
https://doi.org/10.1016/s0022-0248(96)00733-6
Zobrazit plný text záznamu
4
Iodine use in solid‐source III–V molecular‐beam epitaxy
Autor: F. Flack, R. W. Streater, A. J. SpringThorpe, M. Micovic
Publikováno v: Applied Physics Letters. 69:2680-2682
Use of iodine for in situ etching of GaAs, AlAs, and InAs in solid‐source molecular‐beam epitaxy has been explored. Reflectance high‐energy electron‐diffraction intensity oscillations have been observed during iodine etching of GaAs and InAs,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec47dfe5e5f32e0f0cdcd77c76f569be
https://doi.org/10.1063/1.117676
Zobrazit plný text záznamu
5
Calibrated scanning spreading resistance microscope (SSRM) on buried-heterostructure multiple-quantum-well lasers: probing individual quantum wells and free carrier concentrations
Autor: St. J. Dixon-Warren, A.J. Spring Thorpe, G. Knight, T. Grevatt, J.K. White, Edward H. Sargent, R. W. Streater, Dayan Ban, G. Pakulski
Publikováno v: Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. We report the results of calibrated high-spatial-resolution SSRM measurement, showing that we are able to resolve individual quantum wells and determine the activated doping of the p-n-p-n thyristor current blocking layers of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88e8674f039863cc3b0ded5cd7a77e9a
https://doi.org/10.1109/cleo.2002.1034410
Zobrazit plný text záznamu
7
Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors
Autor: R. W. Streater, St. J. Dixon-Warren, Karen L. Kavanagh, I. Calder, Anthony J. SpringThorpe, R. P. Lu
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:1682
Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP dopant calibration samples. The current transport mechanisms between the diam
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::326f7ec9a7418f9f494b59f3a71234d8
https://doi.org/10.1116/1.1496512
Zobrazit plný text záznamu
8
Effect of growth rate on surface morphology of heavily carbon-doped InGaAs
Autor: Richard Arès, R. W. Streater, A. Kuhl
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1550
Carbon-doped InGaAs was grown at two growth rates by chemical beam epitaxy using carbon tetrabromide as the dopant precursor. Surface roughness was measured using atomic force microscopy. Step-flow growth was observed for undoped InGaAs but a roughen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02925403eccbc6f66b301d83ac9d96cb
https://doi.org/10.1116/1.1374622
Zobrazit plný text záznamu
9
Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures
Autor: Glen Hillier, Anthony J. SpringThorpe, St. J. Dixon-Warren, I. Calder, Richard Arès, R. P. Lu, Karen L. Kavanagh, R. W. Streater, A. Kuhl, E. M. Griswold
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1662
Two-dimensional carrier profiling using scanning spreading resistance microscopy (SSRM) has recently been reported for Si- and InP-based structures. In this article, we report SSRM measurements solely on III–V material-based structures. We have stu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fed356ae84aa0cbc5cf1daf5b2ab7fae
https://doi.org/10.1116/1.1387458
Zobrazit plný text záznamu
10
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr[sub 4]
Autor: W. Songprakob, J. Gebauer, Eicke R. Weber, A. J. SpringThorpe, Dmitri Lubyshev, R. W. Streater, Petra Specht, R. Zallen, R. Zhao, W. K. Liu, S. Vijarnwannaluk
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:1594
Carbon-doped GaAs and InP grown at low temperatures by molecular-beam epitaxy contain a high concentration of antisite defects which gives rise to ultrafast carrier trapping time and desirable radiation-hard properties. The use of CBr4 as the dopant
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f49dda68829071a573a29fe6c0caa7a3
https://doi.org/10.1116/1.591434
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje