Zobrazeno 1 - 10
of 19
pro vyhledávání: '"R. W. Kelsall"'
Autor:
S L Liew, D J Norris, A G Cullis, R W Kelsall, P Harrison, Z Ikonic, D J Paul, S A Lynch, R Bates, D D Arnone, D J Robbins
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373ae8a60e1caef90369cacf49728e17
https://doi.org/10.1201/9781351074636-36
https://doi.org/10.1201/9781351074636-36
Autor:
R. W. Kelsall, A. Bourlange, Alessandro Pecchia, B. J. Hickey, Stephen D. Evans, Neville Boden, Bijan Movaghar
Publikováno v:
Materials Science and Technology. 18:729-732
A novel hybrid organic/inorganic heterostructure is described, comprising a highly ordered discotic liquid crystal layer, self-organised on an ultrathin Au film. The electronic properties of the hybrid structure have been investigated using a range o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d07e265de8488ecf0afe6fb5223c5a00
https://doi.org/10.1179/026708302225003901
https://doi.org/10.1179/026708302225003901
Autor:
T. Shen, Neville Boden, A. Bourlange, Alessandro Pecchia, M. Howson, Stephen D. Evans, R. W. Kelsall, Bijan Movaghar
Publikováno v:
Microelectronic Engineering. :633-644
We calculate the conductivity of two-dimensional hybrid multilayer films formed by the self-assembly of an ordered liquid crystalline array of molecular columns on an ultra-thin MBE grown metal layer. Electrons in the metal interact with the molecula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f77c11c2aa78c505b64ec708762735d
https://doi.org/10.1016/s0167-9317(99)00527-4
https://doi.org/10.1016/s0167-9317(99)00527-4
Autor:
A. J. Lidsey, R. W. Kelsall
Publikováno v:
VLSI Design, Vol 8, Iss 1-4, Pp 21-27 (1998)
The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self-consistent coupling of Schrodinger, Poisson and Monte Carlo algo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e057f9bf168cdae447394530633893a
https://doaj.org/article/904bcaa58d8346288204b25ced799bd7
https://doaj.org/article/904bcaa58d8346288204b25ced799bd7
Autor:
R. W. Kelsall, P. Harrison
Publikováno v:
Journal of Applied Physics. 81:7135-7140
Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetric GaAs-Ga(1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd501e5781c0f2d2053413c3cf72ebaf
https://doi.org/10.1063/1.365310
https://doi.org/10.1063/1.365310
Autor:
G. T. Reed, F. Y. Gardes, D. J. Thomson, Y. Hu, S. Liu, P. Petropoulos, J-M. Fédéli, L. O’Faolain, Kapil Debnath, T. F. Krauss, L. Lever, Z. Ikonic, A Brimont, P. Sanchis, M. Myronov, D. R. Leadley, R. W. Kelsall
Publikováno v:
European Conference and Exhibition on Optical Communication.
In the last 8 years carrier depletion modulators have become the mainstream high data rate building block for high performance silicon photonics link. In this work we describe carrier depletion MZI and ring modulators, cavity structures for modulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2579721c6c7b6cf61cc6a22f9d1f818b
https://doi.org/10.1364/eceoc.2012.tu.1.e.3
https://doi.org/10.1364/eceoc.2012.tu.1.e.3
Publikováno v:
Semiconductor Science and Technology. 8:219-223
The authors report on Monte Carlo simulations of low-field hole transport at 77 K in InGaAs-AlGaAs quantum wells of different widths and alloy compositions. The valence subband structure is obtained using a k.p method within the infinite well approxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a5cc31579278838fc2c8decffe31ad
https://doi.org/10.1088/0268-1242/8/2/012
https://doi.org/10.1088/0268-1242/8/2/012
Autor:
R W Kelsall, R. A. Abram
Publikováno v:
Semiconductor Science and Technology. 7:B312-B315
The authors have carried out Monte Carlo simulations of hole transport in a range of InGaAs/GaAs strained quantum well structures. The simulations include phonon, impurity and alloy scattering, with rates obtained using k.p band structure. The simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68168709c03258735ef56b47104b66e7
https://doi.org/10.1088/0268-1242/7/3b/078
https://doi.org/10.1088/0268-1242/7/3b/078
Publikováno v:
Semiconductor Science and Technology. 7:B390-B393
The authors have used a self-consistent Monte Carlo simulation to investigate the effect of high currents on the base-collector region of a heterostructure bipolar transistor. By considering identical device structures in Si and GaAs they are able to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5221b454e0f24afb93914300f07feaf
https://doi.org/10.1088/0268-1242/7/3b/102
https://doi.org/10.1088/0268-1242/7/3b/102
Publikováno v:
Semiconductor Science and Technology. 7:86-91
The mobility and velocity-field characteristic of holes in an In0.18Ga0.82As/GaAs strained quantum well have been obtained using a Monte Carlo simulation, for lattice temperatures of 77 K and 4.2 K. The simulation incorporates a four-band Luttinger-K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3551702ef88a3428e8ad6050e694bf23
https://doi.org/10.1088/0268-1242/7/1/015
https://doi.org/10.1088/0268-1242/7/1/015