Zobrazeno 1 - 10
of 167
pro vyhledávání: '"R. W. Kaliski"'
Autor:
D. W. Nam, John Dallesasse, P. Gavrilovic, R. D. Burnham, Nick Holonyak, E. J. Vesely, R. W. Kaliski
Publikováno v:
Applied Physics Letters. 56:2436-2438
Data are presented on the long‐term (≳8 yr) degradation of AlxGa1−xAs‐AlAs ‐GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs ‘‘buried
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6d417ba2aa548671f6bd75c99c4004c
https://doi.org/10.1063/1.102902
https://doi.org/10.1063/1.102902
Publikováno v:
Journal of Applied Physics. 62:998-1005
Transmission electron microscopy and photoluminescence data are presented, before and after sample thermal annealing, on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se or Mg sheet doping in the barriers or in the quantum wells (QWs). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b491b7e5ae942fb303b228e31564adf
https://doi.org/10.1063/1.339661
https://doi.org/10.1063/1.339661
Autor:
Milton Feng, D. G. McIntyre, C. R. Ito, R. Bean, K. C. Hsieh, R. W. Kaliski, H. B. Kim, K. Zanio
Publikováno v:
Journal of Applied Physics. 64:1196-1200
GaAs layers grown on misoriented silicon substrates are examined for defect reduction as a function of thermal annealing and degree of misorientation. These GaAs layers (3–4 μm) are grown by a two‐step metalorganic chemical vapor deposition proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8add24453efc6e294b5bf80f37f62e16
https://doi.org/10.1063/1.341884
https://doi.org/10.1063/1.341884
Autor:
Milton Feng, R. D. Burnham, Louis J. Guido, K. C. Hsieh, Nick Holonyak, V. K. Eu, R. W. Kaliski
Publikováno v:
Journal of Applied Physics. 61:1329-1334
Extensive data are presented on impurity‐induced layer disordering (IILD) of AlxGa1−xAs‐GaAs quantum‐well heterostructures and superlattices that are Si implanted and annealed (Si+‐IILD) at three different implant doses. We show that impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b07e1128c9aecce343c38aa322f1c7
https://doi.org/10.1063/1.338111
https://doi.org/10.1063/1.338111
Autor:
L. J. Guido, N. Holonyak, K. C. Hsieh, R. W. Kaliski, J. E. Baker, D. G. Deppe, R. D. Burnham, R. L. Thornton, T. L. Paoli
Publikováno v:
Journal of Electronic Materials. 16:87-91
Recent work indicates that the alloy (Si2)x(GaAs)1−x can be formed within the GaAs quantum well of an AlxGa1−xAs-GaAs quantum well heterostructure (QWH) and results in a shift of laser operation to higher energy. In this paper we show, by SIMS an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02ba27ca453105478417e4d86059637
https://doi.org/10.1007/bf02667795
https://doi.org/10.1007/bf02667795
Autor:
J. E. Epler, M. G. Craford, M. D. Camras, G. A. Herrmannsfeldt, M. J. Peanasky, Nick Holonyak, C. H. Wu, R. W. Kaliski, F. G. Kellert, M. J. Tsai, H. G. Drickamer
Publikováno v:
Journal of Applied Physics. 57:1734-1738
High‐pressure studies on high quality AlxGa1−xAs double heterostructure light emitting diodes (LEDs) grown by liquid phase epitaxy (LPE) are presented. The AlxGa1−xAs active region varies in composition from x∼0.25 to x∼0.53, i.e., through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373cad8b8fc7a4e551bdd83518aa4496
https://doi.org/10.1063/1.334446
https://doi.org/10.1063/1.334446
Autor:
W. E. Plano, Thomas L. Paoli, Robert L. Thornton, J. E. Epler, R. W. Kaliski, Louis J. Guido, Nick Holonyak, Robert D. Burnham, K. C. Hsieh
Publikováno v:
Journal of Applied Physics. 61:1372-1379
Data are presented showing that the Al‐Ga interdiffusion coefficient (DAl‐Ga) for an AlxGa1−xAs‐GaAs quantum‐well heterostructure, or a superlattice, is highly dependent upon the crystal encapsulation conditions. The activation energy for A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d03102733ec84a91b8ba78b088b794
https://doi.org/10.1063/1.338116
https://doi.org/10.1063/1.338116
Autor:
G. A. Herrmannsfeldt, R. W. Kaliski, Robert D. Burnham, Nick Holonyak, J. E. Epler, M. J. Peanasky, Robert L. Thornton, H. G. Drickamer
Publikováno v:
Journal of Applied Physics. 57:1495-1499
Short wavelength Alx’Ga1−x’As‐AlxGa1−xAs (x’∼0.85, x∼0.22) quantum‐well heterostructure (QWH) laser diodes (well size Lz ≊400 A) that operate continuously (cw) at 300 K are subjected to hydrostatic pressure (≲12 kbar). The emiss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04f6607ca54d1d8c67b1f88ccbf4dbc4
https://doi.org/10.1063/1.334461
https://doi.org/10.1063/1.334461
Autor:
M. D. Camras, Nick Holonyak, M. A. Nixon, J. M. Brown, W. T. Dietze, C. R. Lewis, M. J. Ludowise, R. W. Kaliski
Publikováno v:
Journal of Applied Physics. 54:6183-6189
Stimulated emission data are presented on a large variety of strained‐layer quantum‐well heterostructures (QWH’s) and superlattices (SL’s) grown by metalorganic chemical vapor deposition (MOCVD). These structures consist of barrier‐well com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b230eb711dbb0cb0c79656935f0bff87
https://doi.org/10.1063/1.331932
https://doi.org/10.1063/1.331932
Autor:
G. S. Jackson, P. Gavrilovic, Nick Holonyak, Robert L. Thornton, James J. Coleman, J. Gavrilovic, Thomas L. Paoli, K. C. Hsieh, R. W. Kaliski, R. D. Burnham, Kathleen Meehan
Publikováno v:
Journal of Applied Physics. 58:101-107
Photoluminescence and absorption data are presented on Al x Ga1−x As‐GaAs superlattices(SLs) disordered into bulk‐crystal Al y Ga1−y As (0≤y≤x) by Si or Gediffusion. The bulk‐crystal Al y Ga1−y As produced by impurity‐induced disord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::187ecf25f30844a2a7ed24996a7b62d9
https://doi.org/10.1063/1.335710
https://doi.org/10.1063/1.335710