Výsledky vyhledávání - "R. W. Gedridge"

Autor: Y. S. Chun, R. W. Gedridge, Gerald B. Stringfellow

Publikováno v: Journal of Electronic Materials. 25:1539-1544

The reaction mechanisms for the pyrolysis of diisopropylantimonyhydride (DIPSbH, (C3H7)2SbH) alone and for the co-pyrolysis of DIPSbH and trimethylindium (TMIn, (CH3)3In) in D2 and H2 ambients have been studied in an isothermal flow-tube, “ersatz�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0e2188808ca3ddb955d10983933b0b9
https://doi.org/10.1007/bf02655396

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Low-pressure pyrolysis studies of a new phosphorus precursor: Tertiarybutylbis(dimethylamino)phosphine

Autor: R. W. Gedridge, C. W. Hill, T. J. Groshens, L. P. Sad Wick, Gerald B. Stringfellow

Publikováno v: Journal of Electronic Materials. 25:1434-1438

The low pressure decomposition of tertiarybutylbis(dimethylamino) phosphine, (t-Bu)P(NMe2)2, (TBBDMAP), has been studied on quartz and deposited GaP and InP surfaces. This new phosphorus precursor has been found to pyrolyze on quartz surfaces at much

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a17adb70b9f605c0bf4adddfc60aae38
https://doi.org/10.1007/bf02655379

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Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPInDIPTe)

Autor: M. J. Antonell, C. R. Abernathy, R. W. Gedridge

Publikováno v: Journal of Crystal Growth. 164:420-424

Triisopropylindium-diisopropyltellurium (TIPInDIPTe) has been investigated as an alternative n-type dopant for InP. TIPInDIPTe was used to provide n-type doping in InP with electron concentrations as high as 1.4 × 1020cm−3. The Te concentrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a60be9395e280c28053d43ec36977f63
https://doi.org/10.1016/0022-0248(95)01020-3

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InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony

Autor: J. Shin, Y. Hsu, T. C. Hsu, G. B. Stringfellow, R. W. Gedridge

Publikováno v: Journal of Electronic Materials. 24:1563-1569

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e750a902dddf2c39273ea9f4b17e14fd
https://doi.org/10.1007/bf02676812

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Pyrolysis of diisopropylantimony hydride: A new precursor for organometallic vapor phase epitaxy

Autor: M. Tao, C. W. Hill, R. W. Gedridge, Gerald B. Stringfellow

Publikováno v: Journal of Electronic Materials. 23:447-451

The pyrolysis of diisopropylantimony hydride (DIPSbH), (C3H7)2SbH, has been studied in an isothermal flow-tube reactor. The reaction products in H2, D2, and He carrier gases were studied using a time-of-flight mass spectrometer. T50 for this compound

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27cf93bd03cd22379b62cb7fb21453bf
https://doi.org/10.1007/bf02671228

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Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium triisopropylindium adduct

Autor: E. Sullivan, Kelvin T. Higa, R. W. Gedridge, D. L. Lee, P. H. Hallock, R. Korenstein

Publikováno v: Journal of Electronic Materials. 22:853-857

A new indium source, triisopropylindium, was used to dope HgCdTe layers grown by metalorganic chemical vapor deposition n-type with carrier concentrations, nH, in the range between low 1015 and low 1017 cm−3 at 77K. The reproducibility of carrier c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::927cf857008687f453c8aeefcc94a6f8
https://doi.org/10.1007/bf02817497

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Nonalloyed high temperature ohmic contacts on Te-doped InP

Autor: Stephen J. Pearton, Fan Ren, M. J. Antonell, Melanie W. Cole, James Robert Lothian, C. R. Abernathy, R. W. Gedridge, Jeffrey R. LaRoche

Publikováno v: Applied Physics Letters. 74:1845-1847

We report on a thermal stability study of WSi0.79 contacts on Te-doped InP. The epitaxial InP layers were grown on Fe-doped semi-insulating InP substrates by metalorganic molecular beam epitaxy. Tri-isopropylindium-di-isopropyltellurium was used as t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06d2b40f8cd338eb4c137d97f0492c35
https://doi.org/10.1063/1.123688

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Triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSb

Autor: G. B. Stringfellow, R. W. Gedridge, Z. M. Fang, C. H. Chen

Publikováno v: Applied Physics Letters. 58:2532-2534

In the past, trimethylantimony (TMSb) has been almost exclusively used as the Sb source in organometallic vapor phase epitaxy (OMVPE). However, TMSb decomposes at relatively high temperatures (above 500 °C). For growth at lower temperatures, TMSb is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30fe7cfd81ab2e2283da8453e3706a18
https://doi.org/10.1063/1.104817

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Low‐temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimony

Autor: R. W. Gedridge, Gregory T. Stauf, D. K. Gaskill, Nicholas Bottka

Publikováno v: Applied Physics Letters. 58:1311-1313

InSb has been grown by organometallic vapor phase epitaxy using triisopropylantimony (TIPSb) and trimethylindium (TMIn) at temperatures as low as 300 °C, the lowest yet reported for a stable Sb source. Unintentionally doped films were n type, and th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71d5a69a6af0b519d70f24ab55103a11
https://doi.org/10.1063/1.104346

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