Zobrazeno 1 - 8
of 8
pro vyhledávání: '"R. W. Burkhardt"'
Publikováno v:
Disordered Materials ISBN: 9781468487473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a613963e890fe54cfba93adf9c08531
https://doi.org/10.1007/978-1-4684-8745-9_21
https://doi.org/10.1007/978-1-4684-8745-9_21
Publikováno v:
Disordered Materials ISBN: 9781468487473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3dd8e88e06f5df0b57142f3a1857144
https://doi.org/10.1007/978-1-4684-8745-9_22
https://doi.org/10.1007/978-1-4684-8745-9_22
Autor:
James L. Wood, Stanford R. Ovshinsky, Alan M. Kadin, John E. Keem, J. T. Chen, R. W. Burkhardt
Publikováno v:
IEEE Transactions on Magnetics. 21:842-845
We have fabricated Mo x C 1-x thin film samples by sputtering, and have studied the dependence of superconducting critical temperatures, fields, and currents on composition and microstructure. For x in the range from 40-60%, the preferred nonequilibr
Autor:
R W, Burkhardt
Publikováno v:
Science (New York, N.Y.). 222(4620)
Autor:
R W, Burkhardt
Publikováno v:
Studies in history of biology. 3
Publikováno v:
MRS Proceedings. 56
A simple and inexpensive technique is described, which makes novel use of electrolytic anodization to obtain an effective depth profile of artificial nultilayered structures based on a number of refractory metals. Successful MAPs (Multilayer Anodizat
Publikováno v:
MRS Proceedings. 37
Following the earlier multilayer work of Ovshinsky and colleagues, we have fabricated thin-film samples consisting of alternating periodic layers of a transition metal (Nb, Mo, W) and a semiconducting element (Si, Ge, C) by sequential sputtering from
Autor:
R. W. Burkhardt
Publikováno v:
Nature. 286:187-188
Lamarck ou le Mythe du Precurseur. By M. Barthelemy-Madaule. Pp.185. (Editions du Seuil: Paris, 1979.) Approx. 55F, £7.