Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. W. Bené"'
Autor:
R. W. Bené, R. M. Walser
Publikováno v:
Journal of Vacuum Science and Technology. 14:925-929
We present a model for Schottky barriers on silicon based upon the formation of a glassy membrane layer between the last metal layer and silicon. We postulate that this membrane has the properties of a semiconducting glass with quasiparticle states i
Autor:
H. Y. Yang, R. W. Bené
Publikováno v:
Journal of Electronic Materials. 12:1-10
We have observed phase nucleation in ultrathin Ti films deposited. upon Si substrates using transmission electron diffraction (TED). After subjecting the samples to vacuum annealing at various temperatures, we find that the first compound phase forme
Autor:
R. W. Bené, H. Ehsani
Publikováno v:
Journal of Applied Physics. 59:2808-2811
In this study we report the results of structural studies of the interfaces between sputter‐deposited copper (Cu) thin films and Hg0.8Cd0.2Te, CdTe substrates. In both cases, Cu2Te was formed even though the heat of reaction (ΔHR) would be positiv
Publikováno v:
Journal of Applied Physics. 46:2250-2256
In this paper we present the results of the pyromagnetic measurements on CoS2−xSex in the frequency range 100 Hz–10 MHz. The effect of the eddy current losses on the frequency response behavior is calculated and seems to explain the experimental
Publikováno v:
Journal of Vacuum Science and Technology. 15:1325-1331
Thin nickel films rf sputtered onto both (100) and (111) oriented silicon produce amorphous surface regions, as indicated by transmission electron diffraction (TED), in the equivalent thickness range 10?t?28 A. AES measurements indicate to contaminan
Publikováno v:
Journal of Vacuum Science and Technology. 17:911-915
We present transmission electron microscopy (TED) and transport measurements on thin films of cobalt on (100) and (111) silicon substrates which show that first phase nucleation proceeds upon deposition past a critical thickness and is preceded by a
Publikováno v:
Physica Status Solidi (a). 23:117-122
Thermal boundary conditions influencing the electrical behavior of ferrite thermal-switching devices are determined by comparing experimental results with cylindrical model calculations. The results show that in these devices, radial heat flux in the
Autor:
R. W. Bené
Publikováno v:
Journal of Applied Physics. 61:1826-1833
We present a model for solid‐state silicide nucleation at the interface of a thin metal film and a silicon substrate, starting with the assumption that compound nucleation in these systems is a kinetically controlled process. We consider the work b
Autor:
R. W. Bené, H. Ehsani
Publikováno v:
Journal of Applied Physics. 64:175-183
The interfacial reaction between thin Ni film (deposited by either e beam evaporation or sputtering) and (Cd, Hg0.8Cd0.2)Te has been investigated using transmission electron microscopy and diffraction. Auger depth profiles have been used to determine
Publikováno v:
Physical Review B. 10:255-264
A single-crystal sample of ytterbium orthoferrite is investigated using a pyromagnetic detection method from 4.2 to 20 \ifmmode^\circ\else\textdegree\fi{}K. The existence of two second-order phase transitions at either end of the spin reorientation i