Zobrazeno 1 - 10
of 30
pro vyhledávání: '"R. Vincenzoni"'
Publikováno v:
Journal of Crystal Growth. 164:327-333
In this work we focus our attention on the growth and development of low Miller index faces on patterned InP substrates for the InGaAs InP system. In particular, we present an extensive study about the dependence of growth rate and facet development
Publikováno v:
Journal of Non-Crystalline Solids. 187:489-493
Device-quality amorphous silicon-carbon alloys have been grown by PECVD. Using these materials, n-SnO2/a-SiC:H/Al structures have been fabricated which exhibit promising optoelectronic properties. Since the transport properties of the n-SnO 2 a-SiC:H
Autor:
F. Galluzzi, E. Cappelli, R. Vincenzoni, Stefano Salvatori, P. Ascarelli, G. de Cesare, F. Pinzari
Publikováno v:
Diamond and Related Materials. 4:628-631
The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20–270 °C. The results were related to the morphology and composition of the diamond film by a
n/sup +/-SnO/sub 2//a-SiC:H/metal thin-film photodiodes with voltage-controlled spectral sensitivity
Publikováno v:
IEEE Transactions on Electron Devices. 42:2062-2069
n/sup +/-SnO/sub 2//a-SiC/metal photodiodes with voltage-controlled photosensitivity have been realized by using both carbon-rich and silicon-rich a-SiC alloys. Carbon-rich devices show a response peak located at 530 nm independent of the applied vol
Publikováno v:
Solid-State Electronics. 37:1937-1942
Electronic properties of n-SnO2/i-Si1−xCx:H/Au MIM-type devices (with x = 0.5–0.75) have been investigated by means of current-voltage measurements in dark conditions and under illumination. Richardson-Schottky emission is demonstrated to be the
Publikováno v:
Diamond and Related Materials. 3:874-877
Optoelectronic properties of metal/insulator/metal-type devices with the structure n-SnO 2 /i-Si 1 − x C x : H/Au(with x = 0.5–0.7), where i-Si i- x C x :H denotes hydrogenated Si C alloys, have been investigated by means of current-voltage measu
Publikováno v:
Solar Energy Materials and Solar Cells. 31:525-533
A model of light-induced defect growth in a-Si-:H p-i-e cells is presented, based on the recombination of photo-generated carriers. Adopting a variable minority-carrier transport scheme, the defect growth exhibits a strong dependence on the electric
Autor:
Elena Maria Tresso, G. Galluzzi, Candido Pirri, R. Vincenzoni, F. Demichelis, G. Crovini, G. Guattari, Giuseppe Leo
Publikováno v:
Journal of Non-Crystalline Solids. :1035-1038
a-SiC:H films with high carbon to silicon ratio (from 0.3 to 0.7) have been grown by RF plasma decomposition of CH4 and SiH4 mixtures with and without hydrogen dilution and at different substrate temperatures. Their structural and optoelectronic prop
Publikováno v:
Scopus-Elsevier
Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dil