Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R. Venigalla"'
Autor:
Miles Greiner, Venkata V. R. Venigalla
Publikováno v:
Nuclear Technology. 167:313-324
A two-dimensional finite volume mesh of a legal-weight truck cask cross section is constructed, including four pressurized water reactor fuel assemblies inside. Computational fluid dynamics (CFD) simulations calculate buoyancy-driven gas motion, natu
Publikováno v:
Nuclear Technology. 159:192-201
The response of a truck package to a radiation fire model is simulated for a range of fire durations using three-dimensional finite element analysis. A model is developed to determine the cumulative seal degradation from its temperature-versus-time h
Publikováno v:
Journal of Pressure Vessel Technology. 136
In the current work, a geometrically-accurate two-dimensional model is developed of an isolated fuel assembly within isothermal compartment walls. Finite difference thermal simulations are performed to determine the cladding temperature for a range o
Autor:
Xinlin Wang, D. Dobuzinsky, Steven J. Koester, C. Ouyang, Wilfried Haensch, Amit Kumar, Amlan Majumdar, R. Venigalla, Judson R. Holt
Publikováno v:
IEEE Electron Device Letters. 30:413-415
In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate
Autor:
Amlan Majumdar, R. Venigalla, Steven J. Koester, D. Dobuzinsky, Jeffrey W. Sleight, Judson R. Holt, Zhibin Ren, W. Haensch
Publikováno v:
IEEE Electron Device Letters. 29:515-517
We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs.
Autor:
Mukesh Khare, James N. Pan, D.V. Singh, Kathryn W. Guarini, Hasan M. Nayfeh, John M. Hergenrother, B.L. Tessier, John A. Ott, Meikei Ieong, Linda Black, O. Dokumaci, Wilfried Haensch, R. Venigalla, Zhibin Ren, Jeffrey W. Sleight, Wesley C. Natzle, Dureseti Chidambarrao
Publikováno v:
IEEE Electron Device Letters. 27:288-290
In this letter, the effect of longitudinal uniaxial mechanical stress on electron mobility in high-performance fully depleted ultrathin silicon-on-insulator nFETs with a raised source/drain (RSD) architecture and channel lengths ranging from 1 /spl m
Autor:
Russell H. Arndt, Ashima B. Chakravarti, Anthony G. Domenicucci, Amanda L. Tessier, Jinping Liu, Sunfei Fang, Kevin McStay, Zhengwen Li, Randolph F. Knarr, S. Lee, Joseph F. Shepard, Herbert L. Ho, A. Arya, R. Venigalla, W. Davies, R. Takalkar, Rishikesh Krishnan, Paul C. Parries, B. Morgenfeld, Xin Li, S. Gupta, Michael P. Chudzik, Scott R. Stiffler, Puneet Goyal, Babar A. Khan, Sadanand V. Deshpande, J. Dadson, Scott D. Allen
Publikováno v:
2010 IEEE International SOI Conference (SOI).
In this paper, we describe the unique scaling challenges, critical sources of variation, and the potential trench leakage mechanisms of 32nm trench capacitors that utilize high-к/metal electrode materials. This is the first eDRAM technology that has
Publikováno v:
ASME 2010 Pressure Vessels and Piping Conference: Volume 7.
The temperature of spent nuclear fuel cladding within transport casks must be determined for both normal conditions of transport and hypothetical fire accident conditions to assure that it does not exceed certain limit conditions. In the current work
Autor:
Venkata V. R. Venigalla, Miles Greiner
Publikováno v:
Volume 7: Operations, Applications and Components.
A two-dimensional finite volume mesh is constructed that accurately represents the geometry of a legal weight truck cask, including four PWR fuel assemblies inside. CFD simulations calculate buoyancy driven gas motion as well as natural convection an
Autor:
D.V. Singh, W. Haensch, Omer H. Dokumaci, Linda Black, B.L. Tessier, A. Nomura, R. Venigalla, John M. Hergenrother, James N. Pan, Z. Ren, Keith Jenkins, H. Nakayama, Wesley C. Natzle, Josephine B. Chang, Meikei Ieong, Dureseti Chidambarrao, Jeffrey W. Sleight, John A. Ott
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We report for the first time, the effect of stress memorization (SM), and the combined effects of SM and dual stress liner (DSL) on high performance fully-depleted ultra-thin channel devices with a raised source/drain architecture and channel thickne