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of 16
pro vyhledávání: '"R. Vankemmel"'
Publikováno v:
Annales d'Endocrinologie. 84:151
Akademický článek
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Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 13:531-551
This paper presents a new discretization technique of the hydrodynamic energy balance model based on a finite‐element formulation. The concept of heat source lumping is introduced, and the thermal conductivity model includes the effect of varying b
Publikováno v:
Solid-State Electronics. 36:1379-1384
In this paper a new model for the intrinsic concentration in silicon is derived. It uses new wide temperature range models for the effective electron and hole masses which are based on fundamental computations found in literature. Furthermore the ava
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12:1786-1797
One of the problems while simulating heterojunction devices is the poor numerical stability due to the broad number range for concentrations and currents in the different materials. However, it is not obvious which scaling to apply as more than one m
Autor:
Wim Schoenmaker, R. Vankemmel
Publikováno v:
Microelectronic Engineering. 19:31-38
We review the present status of compound semiconductor device simulations. Some scaling techniques are discussed for the simulation of abrupt heterojunctions. An example illustrates the method.
Publikováno v:
Solid-State Electronics. 35:571-578
In this paper a very efficient way to obtain a unified scaling system while implementing heterojunctions in a 2-D finite-element device simulator is discussed. A real device is simulated using the technique described. It is shown that discrepancies b
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 10:631-640
PRISM assumes that the physics of semiconductor devices, at least the electrical behaviour, can be explained with the following equations. Poisson equation
Autor:
R. Vankemmel, K. De Meyer
Publikováno v:
IEEE Transactions on Electron Devices. 37:168-176
In trenchlike isolated devices, several parasitic effects exist. In a real-case test simulation, two such effects are shown. The most difficult to handle is the corner effect at the convex and concave corners in the structure. The corner effect is st
Autor:
R. Vankemmel, Wim Schoenmaker
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173725
We present an implementation of the energy balance equations in two dimensional device simulators which is based on a definite positive formulation of the ohmic energy sources for the carriers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd511e1bbfa6b3eb7904a0127f1a915
https://doi.org/10.1007/978-3-7091-6657-4_28
https://doi.org/10.1007/978-3-7091-6657-4_28