Zobrazeno 1 - 10
of 71
pro vyhledávání: '"R. Van Roijen"'
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
For a recent topcoat change at gate lithography in the 32nm technology, it was found that the newly created focus condition caused systematic missing pattern on wrong-way gate structures. To find the correct focus condition, several inspections had t
Publikováno v:
Microelectronics Reliability. 40:1263-1266
We have investigated the relation between the electrostatic discharge (ESD) level achieved by vertical deflection amplifiers, used for television sets, and other discharge events affecting the reliability. In particular, it is known that the tubes of
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
Nitrogen purge of wafer carriers is driving defect density reduction at critical process steps. We discuss the mechanism of defect creation and how nitrogen purge improves defect density. We report on experimental split data from in line inspection a
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
We report a systematic radial inspection approach using tilt SEM for wafer apex, bevel and extreme edge to understand structural evolution of floating pattern defects first detected post eSiGe deposition. This investigative method in conjunction with
Autor:
C. Sinn, Srinivasan Rangarajan, Emily M. Hwang, J. Scarano, Jeffrey J. Brown, W. Afoh, W. Brennan, R. Van Roijen, R. Keyser, S. Conti
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
Embedded SiGe is widely used to boost the performance of the pFET device at recent technology nodes. We show that the thickness of the deposited SiGe layer has a strong impact on critical device parameters, which implies we require all process steps
Autor:
Javier Ayala, W. Steer, S. Conti, K. Tabakman, Richard O. Henry, Chienfan Yu, E. Meyette, R. Arndt, J. Levy, R. Burda, R. Keyser, R. Van Roijen, Jeffery B. Maxson
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
In semiconductor manufacturing, we expect the cause of defects to be process or tool related. However, at the 90 nm technology node and beyond we find that defects can be caused by issues related to the wafers' environment, such as processing of othe
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Embedded SiGe is applied in CMOS at recent technology nodes to improve device performance and enable scaling. The position of the SiGe surface with respect to the channel is found to have significant impact on the pFET threshold voltage and also on d
Publikováno v:
2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
The application of Laser Anneal to semiconductor manufacturing is shown to have advantages and challenges for process control. We discuss some results, the implications of the real-time control mechanism on the Ultratech anneal tool, the impact of pa
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Power dissipation is one of the most critical issues of modern microprocessors. A number of processing steps is known to be critical to the electrical device parameters that determine power consumption, but the feedback from electrical test, required
Autor:
Steven C. Catlett, R. Logan, Javier Ayala, R. Van Roijen, R. Ramachandran, Joseph F. Shepard, Jeffery B. Maxson, S. Ruegsegger, B. Rawlins, C. Collins, Kevin K. Dezfulian, K. Barker, T. Rust, R. Singh, H. Boiselle
Publikováno v:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The complexity of modern manufacturing processes has sharply increased the number of steps affecting device and circuit performance. We discuss a number of critical steps, their control methodology and how to minimize the time to detect. Product test