Zobrazeno 1 - 10
of 64
pro vyhledávání: '"R. Valin"'
Publikováno v:
Revue d’Elevage et de Médecine Vétérinaire des Pays Tropicaux, Vol 38, Iss 1 (1985)
La bluetongue ou fièvre catarrhale a été diagnostiquée dans 2 élevages de moutons à l'île de la Réunion. Ce foyer, le premier dans un département français d'outre-mer, est dû au type 2 bien qu'une enquête sérologique menée sur 298 bovin
Externí odkaz:
https://doaj.org/article/1d660b31b025474094c9f9ef52f134a3
Publikováno v:
Revue d’Elevage et de Médecine Vétérinaire des Pays Tropicaux, Vol 5, Iss 1 (1952)
Aucun résumé disponible.
Externí odkaz:
https://doaj.org/article/e4df70d4a30b4f1b981154c273f8b196
Publikováno v:
Future Generation Computer Systems. 34:17-25
The failure of Cloud sites and variability of performance of the virtual machines (VMs) in this environment are two issues that have to be taken into account by software providers. If they want to guarantee the return of the results on time to their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f701d0563393380e99416ea53aa7a1db
https://doi.org/10.1016/j.future.2013.12.027
https://doi.org/10.1016/j.future.2013.12.027
This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7729c855a00e2ba53535739c7a512e78
https://cronfa.swan.ac.uk/Record/cronfa28934/Download/0028934-02082016122804.pdf
https://cronfa.swan.ac.uk/Record/cronfa28934/Download/0028934-02082016122804.pdf
Autor:
Antonio J. Garcia-Loureiro, Andres Godoy, Manuel Aldegunde, Carlos Sampedro, Natalia Seoane, R. Valin, Francisco Gamiz
Publikováno v:
The International Journal of High Performance Computing Applications. 27:483-492
Multi-subband ensemble Monte Carlo simulators (MSB-EMC) are essential in semiconductor device modelling in order to study confinement effects when devices are scaled to gate lengths and silicon thicknesses approaching nanometre dimensions. To conside
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e17ea4e0f7b1656defc4c8c7ad31a4cb
https://doi.org/10.1177/1094342012464799
https://doi.org/10.1177/1094342012464799
Autor:
Manuel Aldegunde, Antonio J. Garcia-Loureiro, Francisco Gamiz, C. Sampedro, Natalia Seoane, Andres Godoy, R. Valin
Publikováno v:
IEEE Transactions on Electron Devices. 59:1621-1628
In this paper, we investigate the gate misalignment effects in a 10-nm double-gate silicon-on-insulator MOSFET transistor with a 2-D Monte Carlo simulator. Quantum effects, which are of special relevance in such devices, are taken into account by usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f75d98a7c20506568f5c9cb438b1fb
https://doi.org/10.1109/ted.2012.2192738
https://doi.org/10.1109/ted.2012.2192738
Autor:
Isabel María Tienda-Luna, R. Valin, Andres Godoy, Blanca Biel, F. Martinez-Carricondo, Francisco Gamiz, Noel Rodriguez, Carlos Sampedro, Antonio J. Garcia-Loureiro
Publikováno v:
Solid-State Electronics. :88-93
With the 32 nm node in mass production, simulation tools have to include quantum effects to correctly describe the behavior of the devices. The Multi-Subband Ensemble Monte Carlo (MSB-EMC) approach constitutes today's most accurate method for the stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787768529a459b20d6f8e3b15ff03a9e
https://doi.org/10.1016/j.sse.2011.06.036
https://doi.org/10.1016/j.sse.2011.06.036
Autor:
Antonio J. Garcia-Loureiro, Manuel Aldegunde, Asen Asenov, Antonio Martinez, R. Valin, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 30:841-851
An efficient implementation of the density-gradient (DG) approach for the finite element and finite difference methods and its application in drift-diffusion (D-D) simulations is described in detail. The new, second-order differential (SOD) scheme is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4b8fe451f9fadbb74585e183057e466
https://doi.org/10.1109/tcad.2011.2107990
https://doi.org/10.1109/tcad.2011.2107990
Autor:
Francisco Gamiz, Andres Godoy, Carlos Sampedro, Francisco G. Ruiz, R. Valin, Antonio J. Garcia-Loureiro
Publikováno v:
Solid-State Electronics
State-of-the-Art devices in mass production are approaching to the performance limit of traditional MOSFET as the critical dimensions are shrunk. Multi-gate devices based on SOI technology, are one of the best candidates to become a standard solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2145ad4752c0e85b822746f178a8d3c9
https://doi.org/10.1016/j.sse.2009.12.007
https://doi.org/10.1016/j.sse.2009.12.007
Publikováno v:
2015 International Workshop on Computational Electronics (IWCE).
Non-equilibrium Green’s Function simulations of an ultra-scale FinFET in the ballistic regime have been carried at low/high drain bias. We have calculated variability due to random dopants located in the source/drain regions of the transistor. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d80a70ca40cd23a3fd4bf70fdbbdcf7
https://doi.org/10.1109/iwce.2015.7301974
https://doi.org/10.1109/iwce.2015.7301974