Zobrazeno 1 - 10
of 45
pro vyhledávání: '"R. V. Tominov"'
Autor:
Z. Vakulov, D. Khakhulin, A. Geldash, R. V. Tominov, V. S. Klimin, V. A. Smirnov, O. A. Ageev
Publikováno v:
Journal of Advanced Dielectrics, Vol 12, Iss 02 (2022)
This paper reports the impact of the laser pulse repetition frequency on growth processes, morphological and electro-physical parameters of nanocrystalline LiNbO3 thin films obtained by the pulsed laser deposition technique. It was found that the nuc
Externí odkaz:
https://doaj.org/article/6ac78c98e89a4b79b74ecc99cb6b2215
Autor:
V. S. Klimin, Vladimir A. Smirnov, Z. E. Vakulov, Oleg A. Ageev, Alexander Mikhaylichenko, E. G. Zamburg, D. A. Khakhulin, R. V. Tominov
Publikováno v:
Materials, Vol 14, Iss 4854, p 4854 (2021)
Materials
Volume 14
Issue 17
Materials
Volume 14
Issue 17
One of the significant limitations of the pulsed laser deposition method in the mass-production-technologies of micro- and nanoelectronic and molecular device electronic fabrication is the issue of ensuring deposition of films with uniform thickness
Autor:
Oleg A. Ageev, Vladimir A. Smirnov, Z. Vakulov, V. S. Klimin, D. A. Khakhulin, R. V. Tominov, Andrey Geldash
Publikováno v:
Journal of Advanced Dielectrics. 12
This paper reports the impact of the laser pulse repetition frequency on growth processes, morphological and electro-physical parameters of nanocrystalline LiNbO3 thin films obtained by the pulsed laser deposition technique. It was found that the nuc
Autor:
D. A. Khakhulin, Vladimir A. Smirnov, V. I. Avilov, R. V. Tominov, Z. E. Vakulov, Oleg A. Ageev, N. I. Alyabieva, E. G. Zamburg
Publikováno v:
Semiconductors. 53:72-77
The results of experimental investigations into the memristor effect and influence of annealing modes on the electrical properties of nanocrystalline zinc-oxide films fabricated by pulsed laser deposition are presented. The possibility of fabricating
Autor:
Ivan S. Ugrumov, Vladimir A. Smirnov, Maksim S. Solodovnik, Denis A. Suharevich, R. V. Tominov, Oleg A. Ageev, V. I. Avilov
Publikováno v:
The 2nd International Online-Conference on Nanomaterials.
In this work, the titanium oxide nanodots arrays formation was carried out. A current-voltage characteristics study of nanodots showed that the resulting structure switches between high resistance and low resistance states. Additionally, we performed
Autor:
Oleg Alexeevich Ageev, Vladimir A. Smirnov, Z. E. Vakulov, V. I. Avilov, R. V. Tominov, Artyom A. Avakyan
Publikováno v:
The 2nd International Online-Conference on Nanomaterials.
This work is devoted to the study of the modes of synthesis of films of nanocrystalline vanadium oxide for the manufacture of resistive memory elements (ReRAM) of neuromorphic systems. The regularities of the influence of pulsed laser deposition mode
Autor:
M. S. Solodovnik, Oleg A. Ageev, Nikita V. Polupanov, R. V. Tominov, Vladimir A. Smirnov, Boris G. Konoplev, V. I. Avilov
Publikováno v:
Materials
Volume 13
Issue 16
Materials, Vol 13, Iss 3451, p 3451 (2020)
Volume 13
Issue 16
Materials, Vol 13, Iss 3451, p 3451 (2020)
The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxi
Publikováno v:
2020 Moscow Workshop on Electronic and Networking Technologies (MWENT).
The paper presents the researching results of the memristor effect on titanium oxide nanostructures obtained by local anodic oxidation. Studies have been carried out on the effect of air humidity in the process chamber during local anodic oxidation o
Autor:
V V Polyakova, O A Ageev, K Korzun, R. V. Tominov, Z E Vakulov, V. S. Klimin, I N Kots, A. A. Rezvan
Publikováno v:
Journal of Physics: Conference Series. 1410(1)
This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO
Autor:
Al. V. Bykov, M. V. Il’ina, Oleg A. Ageev, Vladimir A. Smirnov, R. V. Tominov, N. I. Alyab’eva, V. V. Polyakova
Publikováno v:
Technical Physics. 63:1236-1241
The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed bas