Zobrazeno 1 - 1
of 1
pro vyhledávání: '"R. V. Skryshevsky"'
Publikováno v:
Sensor Electronics and Microsystem Technologies. 5:28-38
An island type palladium film — silicon diode hydrogen sensor has been developed applying thin (15-75 nm) nanoporous silicon as an intermediate sensitive layer. Using a thermal Pd deposition into porous silicon allows to vary the size and morpholog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4829ef8f0d236681152e33183bce2c9
https://doi.org/10.18524/1815-7459.2008.2.114425
https://doi.org/10.18524/1815-7459.2008.2.114425
