Zobrazeno 1 - 10
of 17
pro vyhledávání: '"R. V. Ryzhuk"'
Autor:
N. I. Kargin, I. S. Vasilievsky, Konstantin S. Grishakov, A. A. Gorelov, R. V. Ryzhuk, V. V. Lokotko
Publikováno v:
Russian Microelectronics. 50:170-177
AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a447f137973e904d9aae15328a25449d
https://doi.org/10.1134/s1063739721030057
https://doi.org/10.1134/s1063739721030057
Publikováno v:
Physics Procedia. 72:460-464
The impact of diamond and graphene heat spreading layers on the thermal and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulations in the hydrodynamic model. It is shown th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d1dbd5436a02c64958cfe8a7dfde500
Autor:
Olga V. Korolik, Mikhail S. Tivanov, A. S. Basaev, Serghej L. Prischepa, N. I. Kargin, Yu. P. Shaman, E. A. Kolesov, S. A. Shostachenko, R. V. Ryzhuk, Alexander V. Mazanik, Vladimir Labunov, N. G. Kovalchuk, Ivan Komissarov
Publikováno v:
Physics Procedia. 72:450-454
b Belarusain State UniversityNezavisimosti Av4, Minsk 220030, Republic of Belarus c State Scientific Centre National Research University of Electronic Technology (MIET), bld. 5, pas 4806, Zelenograd, Moscow 124498, Russia d National Research Nuclear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc3b5e9f7484c75cc2f8c2bbaed714d0
Autor:
Konstantin P. Katin, N. I. Kargin, S. A. Shostachenko, Stanislav V. Minnebaev, Mikhail M. Maslov, Alexandra A. Pischulina, Kirill D. Vanukhin, R. V. Ryzhuk, R. V. Zakharchenko
Publikováno v:
Physics Procedia. 72:419-424
Annealing of contact system Ti/Al/Ni/Au for the Ohmic contact formation to the AlGaN/GaN was performed. Method for determining the height of potential barrier in nonrectifying contact using voltage-capacitance characteristic was proposed. Temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef70f29575ed9d83726cec54b4c1a8ba
https://doi.org/10.1016/j.phpro.2015.09.083
https://doi.org/10.1016/j.phpro.2015.09.083
Autor:
N. B. Smirnov, Anatolyi V. Govorkov, E. A. Kozhukhova, Alexander Y. Polyakov, Cheol-Koo Hahn, In Hwan Lee, R. V. Ryzhuk, N. I. Kargin, Han-Su Cho, Cheong Hyun Roh
Publikováno v:
IEEE Transactions on Nanotechnology. 13:151-159
Electrical properties of GaN films grown on Si by molecular beam epitaxy using various types of strain-relieving layers have been studied by means of Hall/van der Pauw measurements, capacitance-voltage profiling, admittance spectroscopy, and deep lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aba6bf72161cdef2861d4507e8dd8307
https://doi.org/10.1109/tnano.2013.2294996
https://doi.org/10.1109/tnano.2013.2294996
Autor:
Margarita A. Gimaldinova, R. V. Ryzhuk, Konstantin P. Katin, N. I. Kargin, Mahmoud A. Salem, Mikhail M. Maslov, Alexey I. Kochaev
Publikováno v:
International Journal of Nanoscience. 18:1940047
We present ab initio study of structures and properties of silaprismanes Si[Formula: see text]H[Formula: see text] and their nitro derivatives Si[Formula: see text]H[Formula: see text]NO2 ([Formula: see text]–10). We found that silaprismane Si[Form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177fbb9754a718334779c9fa6eb04b4f
https://doi.org/10.1142/s0219581x19400477
https://doi.org/10.1142/s0219581x19400477
Autor:
E. A. Kozhukhova, Cheol Koo Hahn, R. V. Ryzhuk, N. I. Kargin, Alexander Y. Polyakov, Min-Woo Ha, Han Su Cho, In Hwan Lee, A. V. Govorkov, N. B. Smirnov
Publikováno v:
Journal of Alloys and Compounds. 575:17-23
We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2fa6ba4bb1d56d5c182cb116c6c9b19
https://doi.org/10.1016/j.jallcom.2013.04.020
https://doi.org/10.1016/j.jallcom.2013.04.020
Publikováno v:
SPIE Proceedings.
This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6cf7a8100340541c38fa4a9d6dad4f
https://doi.org/10.1117/12.2267053
https://doi.org/10.1117/12.2267053
Autor:
Oleg A. Ageev, S. V. Balakirev, O G Karenkikh, S I Petrov, R. V. Ryzhuk, M. S. Solodovnik, A N Alexeev
Publikováno v:
Journal of Physics: Conference Series. 1124:081024
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::022d5669a10916e75d270970fab47b0d
https://doi.org/10.1088/1742-6596/1124/8/081024
https://doi.org/10.1088/1742-6596/1124/8/081024
Temperature optimization of the Ti/Al/Ni/Au ohmic contact formation to the AlGaN/GaN heterostructure
Autor:
M S Burdykin, B V Kalinin, Y A Porokhonko, A N Vasiliev, A A Belov, R. V. Zakharchenko, R. V. Ryzhuk, N. I. Kargin, S. A. Shostachenko
Publikováno v:
Journal of Physics: Conference Series. 938:012072
This article is devoted to the experimental study of the ohmic contacts based on Ti/Al/Ni/Au metallization to the n+-doped region of the AlGaN / GaN heterostructure. Formed phases are studied at different temperatures. Based on the thermodynamic anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71832be80554d6de8d66018aca5a62e7
https://doi.org/10.1088/1742-6596/938/1/012072
https://doi.org/10.1088/1742-6596/938/1/012072