Zobrazeno 1 - 8
of 8
pro vyhledávání: '"R. V. Pigulev"'
Autor:
U. A. Maryina, D. L. Gazdinsky, O. M. Chapura, L. V. Mikhnev, E. A. Bondarenko, R. V. Pigulev
Publikováno v:
IZVESTIYA SFedU. ENGINEERING SCIENCES. :136-144
Publikováno v:
Russian Microelectronics. 50:665-672
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 23:213-221
The paper presents the results of a study of the luminescent properties of calcium gallate activated by trivalent rare earth ions Yb3+ and Er3+. IR luminescence spectra of samples with a single activator Ca1‑хYbxGa2O4,Ca1‑хErxGa2O4 were studied
Publikováno v:
Journal of Physics: Conference Series. 1384:012002
The article describes frequency characteristics of semiconductor–metal–semiconductor Si–Ag–Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathemati
Study into luminescence and photoconductivity of nano-structured ZnO obtained through sol-gel method
Autor:
M. S. Malorodov, A. A. Skomorokhov, E. A. Bondarenko, A. I. Nikonov, D. L. Gazdinsky, L. V. Mikhnev, R. V. Pigulev, O. M. Chapura
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 597:012051
Sol-gel method from zinc acetate in water was employed to synthesize nano-sized zinc oxide. The structural features of the ZnO obtained samples, their spectral features of luminescence and photoconductivity were studied. The influence of the treatmen
Autor:
A. V. Blagin, I. M. Khabibulin, R. V. Pigulev, D. P. Valyukhov, A. E. Zor'kin, S. V. Lisitsin
Publikováno v:
Russian Physics Journal. 46:1133-1137
The results of a complex investigation of the multicomponent heterostructures based on the A3B5 compounds are presented by the example of bismuth-containing solid solutions. The investigation was performed using the Auger electron and X-ray photoelec
Publikováno v:
Inorganic Materials. 44:793-795
The composition and thickness of GaInPAsSb five-component layers grown on GaSb substrates by temperature-gradient liquid phase crystallization and liquid phase epitaxy and the heterojunction width have been determined by secondary neutral mass spectr
Autor:
L V Mikhnev, E A Bondarenko, O M Chapura, A A Skomorokhov, A I Nikonov, M S Malorodov, R V Pigulev, D L Gazdinsky
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Aug2019, Vol. 597 Issue 1, p1-1, 1p