Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R. V. Parfeniev"'
Autor:
Eduard Hulicius, M. O. Safonchik, Alice Hospodková, R. V. Parfeniev, L. V. Danilov, V. A. Berezovets, Jiří Pangrác, M. P. Mikhailova
Publikováno v:
Semiconductors. 51:1343-1349
Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well (QW) grown by MOVPE on an n-InAs (100) substrate is investigated in quantizing magnetic fields up to B = 14 T at low temperatures T = 1.5 and 4.2 K. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2042f0f276a70ff0d2782fbf2bf86cfd
https://doi.org/10.1134/s1063782617100141
https://doi.org/10.1134/s1063782617100141
Publikováno v:
Semiconductors. 51:1017-1020
The superconducting properties of Pb0.05Sn0.95Te semiconductor alloy doped with 5 at % of In are investigated at a hydrostatic pressure of P 1.35 kbar and T ≥ 1.3 K, the resistivity step to ρ = 0 in the temperature and magnetic-field dependences
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805a1688323c0a75d1aae9d1635045f4
https://doi.org/10.1134/s106378261708022x
https://doi.org/10.1134/s106378261708022x
Publikováno v:
Journal of Physics: Conference Series. 1697:012249
In this work we studied magnetic properties of the semiconductor solid solution (PbzSn1-z)1-xInxTe in superconducting state. Peak-effect in magnetization vs magnetic field dependences was observed, and a paramagnetic response was obtained in supercon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1a45b5ae99a8624631638fc84e70d0
https://doi.org/10.1088/1742-6596/1697/1/012249
https://doi.org/10.1088/1742-6596/1697/1/012249
Autor:
N. Yu. Mikhailin, G. O. Andrianov, R. V. Parfeniev, D. V. Shamshur, V. I. Kozub, S. A. Nemov, A. V. Chernyaev
Publikováno v:
Low Temperature Physics. 41:112-115
The effect of hydrostatic pressures up to 10 kbar and lead content on the superconducting and electrical characteristics of indium-doped (5 at. %) PbzSn1−zTe semiconducting solid solutions is studied. Experimental correlations are found for these p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e8a955c0a9f552aa90bb64dbe33f0f
https://doi.org/10.1063/1.4908193
https://doi.org/10.1063/1.4908193
Autor:
Dariusz Kaczorowski, M. P. Mikhailova, V. A. Berezovets, K. D. Moiseev, R. V. Parfeniev, V. I. Nizhankovskii, N. S. Averkiev
Publikováno v:
Journal of Magnetism and Magnetic Materials. 321:712-715
We report a study of spin-related magnetotransport properties of a type II broken-gap heterostructure formed by InAs substrate bulky doped with Mn and δ-Mn-doped GaInAsSb epilayer. Planar and vertical quantum magnetotransport in a 2D-electron–hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ecf769445fe4fb17e9065c7721e7b3b
https://doi.org/10.1016/j.jmmm.2008.11.032
https://doi.org/10.1016/j.jmmm.2008.11.032
Autor:
Maya P. Mikhailova, V. A. Berezovets, R. V. Parfeniev, Yu. P. Yakovlev, Konstantin D. Moiseev, V. I. Nizhankovski
Publikováno v:
Low Temperature Physics. 33:137-146
The formation of self-consistent quantum wells for electrons and holes in a P(N)-GaInAsSb∕p-InAs broken-gap type II heterojunction with an abrupt planar interface (a transition layer of the order of 1.2nm thick) upon variation of the type and level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15fb51ab47fb117ab50c2c7b7a00ce8
https://doi.org/10.1063/1.2409650
https://doi.org/10.1063/1.2409650
Publikováno v:
Materials Science Forum. 508:25-30
The high sensitivity of the low temperature electrical properties of p-type pure tellurium (Te) to impurities, structural boundaries, point defects and dislocations allows to investigate the structural imperfection profiles in crystals grown under di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5c51822ec343785c8407fb2c08ac90
https://doi.org/10.4028/www.scientific.net/msf.508.25
https://doi.org/10.4028/www.scientific.net/msf.508.25
Autor:
R. V. Parfeniev, K. S. Romanov, V. A. Berezovets, M. P. Mikhailova, K. D. Moiseev, V. I. Nizhankovskii, N. S. Averkiev
Publikováno v:
Physics of the Solid State. 46:2153-2162
Specific features of the energy spectrum of a separated type-II heterojunction in an external magnetic field are studied theoretically and experimentally. It is shown that, due to hybridization of the states of the valence band of one semiconductor a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08953aae87771f2658dc036a5e6eef6b
https://doi.org/10.1134/1.1825564
https://doi.org/10.1134/1.1825564
Autor:
V. I. Nizhankovskii, V. A. Berezovets, Konstantin D. Moiseev, Yu. P. Yakovlev, M. P. Mikhailova, R. V. Parfeniev
Publikováno v:
physica status solidi (a). 195:194-198
High magnetic field magnetoresistance and quantum Hall effect (QHE) in type II broken-gap Ga 1-x In x Sb 1-y As y /p-InAs single heterostructures based on undoped or doped with Zn and Te quaternary epilayers have been investigated to determine the ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fceffc8f5d329b8d2f38c9b9a71e5abe
https://doi.org/10.1002/pssa.200306295
https://doi.org/10.1002/pssa.200306295
Autor:
Yu. P. Yakovlev, V. A. Berezovets, R. V. Parfeniev, V. I. Nizhankovskii, M. P. Mikhailova, K. D. Moiseev
Publikováno v:
Surface Science. :1083-1089
We report the study of quantum magnetotransport in a semimetal channel at the type II broken-gap single heterointerface at magnetic field range up to 16 T at low temperature. The GaIn0.16As0.22Sb/InAs heterostructures with high quality abrupt heterob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4fd3cde26816ee0b00cc4cefc5e05e
https://doi.org/10.1016/s0039-6028(00)01081-5
https://doi.org/10.1016/s0039-6028(00)01081-5