Zobrazeno 1 - 10
of 193
pro vyhledávání: '"R. V. Konakova"'
Autor:
L. O. Matveeva, E. F. Venger, R. V. Konakova, O. Yu. Kolyadina, P. L. Neluba, V. V. Shynkarenko
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 2, Pp 173-179 (2018)
The results of a complex study of C60/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of
Externí odkaz:
https://doaj.org/article/4cb6b869efe14d57a9f7425bddcc31b9
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 3, Pp 253-259 (2020)
In this work, comparative characteristics of thin oxide films (OF) of titanium, erbium, and dysprosium formed on silicon carbide substrates in the presence and absence of a porous silicon carbide (por-SiC) layer have been considered. It has been show
Autor:
V. P. Kladko, Alexander Belyaev, A. S. Pilipchuk, T. V. Petlitskaya, V. V. Shynkarenko, A. S. Slepova, R. V. Konakova, A. I. Lubchenko, A. V. Sachenko, N. V. Safryuk-Romanenko, V. N. Sheremet, N. S. Boltovets, V. A. Pilipenko
Publikováno v:
Semiconductors. 53:469-476
The temperature dependences of the specific contact resistance of silicon ρc with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established tha
Autor:
Yu. Yu. Bacherikov, L. M. Kapitanchuk, O.B. Okhrimenko, O. S. Lytvyn, A. M. Svetlichnyi, N. I. Berezovska, R. V. Konakova
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 360-364 (2018)
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of
Publikováno v:
Semiconductors. 52:131-135
Analysis of the contact-barrier height taking into account the distribution of surface states along coordinate x perpendicular to the insulator–semiconductor interface is performed for metal–semiconductor contacts with a dielectric gap. It is sho
Autor:
A. G. Eremeev, R. V. Konakova, N. D. Vakhnyak, S.I. Budzulyak, L.A. Demchina, S. V. Egorov, Yu. V. Bykov, R.A. Red׳ko, D. V. Korbutyak, O. B. Okhrimenko, A. P. Lotsko, N.I. Berezovskaya
Publikováno v:
Journal of Luminescence. 178:68-71
Effect of microwave radiation (24 GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5 eV was studied using the low-temperature ( T =2 K) photoluminescence (PL) technique. The shapes of do
Autor:
A. M. Svetlichnyi, A. F. Kolomys, R. V. Konakova, Viktor Strelchuk, A. S. Kolomiitsev, I. L. Zhityaev, Oleg A. Ageev, E. Yu. Volkov, O. B. Spiridonov, O. B. Okhrimenko
Publikováno v:
Journal of Superhard Materials. 38:235-240
Electrical properties of low-threshold field emission cathodes produced by growth nanocluster graphene films on the pointed surface of heavily doped n +SiC by sublimation epitaxy have been considered. The quality of the graphene coating has been asse
Publikováno v:
Semiconductors. 50:761-768
The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current o
Autor:
V. S. Slipokurov, A. V. Zorenko, A. V. Sachenko, A. S. Slepova, A. V. Bobyl, V.V. Shynkarenko, V. P. Kladko, Alexander Belyaev, I.N. Arsentiev, R. V. Konakova, N. V. Safryuk, V. M. Kovtonyuk, Ya. Ya. Kudryk, N. S. Boltovets, A. I. Gudymenko
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 18:317-323
Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistan
Autor:
I. L. Jityaev, Oleg A. Ageev, E. Yu. Volkov, A. S. Kolomiytsev, O. B. Spiridonov, O.B. Okhrimenko, A. M. Svetlichnyi, R. V. Konakova
Publikováno v:
Semiconductors. 49:1242-1245
The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current–voltage characteristics are c