Zobrazeno 1 - 7
of 7
pro vyhledávání: '"R. V. Gil"'
Publikováno v:
Journal of Electronic Materials. 24:457-465
Reproducible improvements in the metalorganic vapor phase epitaxy (MOVPE) grown CdTe buffer quality have been demonstrated in a horizontal rectangular duct silica reactor by the use of integratedin situ monitoring that includes laser reflectometry, p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f035c3b00a752025cb3efde50b4cc8b
https://doi.org/10.1007/bf02657948
https://doi.org/10.1007/bf02657948
Publikováno v:
Journal of Electronic Materials. 23:167-173
The focus of this paper is the integrated use of system and wafer monitors to obtain a complete picture of the growth process and to identify the major causes of variance. In situ monitoring of a growing layer of Hg1-xCdxTe using laser reflectometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::945e8fd678d011124d18ca425fa6cdc1
https://doi.org/10.1007/bf02655264
https://doi.org/10.1007/bf02655264
Publikováno v:
Semiconductor Science and Technology. 6:C15-C21
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156fffad394873dfa472ac37e389d98b
https://doi.org/10.1088/0268-1242/6/12c/004
https://doi.org/10.1088/0268-1242/6/12c/004
Autor:
E. R. Gertner, Robert B. Bailey, D. D. Edwall, M.B. Gubala, D.Q. Bui, Kadri Vural, Lester J. Kozlowski, A.B. Vanderwyck, J. Chen, R. V. Gil
Publikováno v:
IEEE Transactions on Electron Devices. 38:1104-1109
Hybrid HgCdTe 256*256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance medium-wavelength infrared (MWIR) imaging systems. The detector arrays for these hybrids are fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0e2a0252ed48414506c8a19e4690fb5
https://doi.org/10.1109/16.78385
https://doi.org/10.1109/16.78385
Publikováno v:
Applied Physics Letters. 59:1022-1024
While a variety of light‐detecting devices have been made with HgCdTe, little has been done to apply this technology to light‐emitting devices. We report here the successful fabrication and operation of the first HgCdTe injection laser. This stri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b1ec4c90f10911e820e8c486e7e8bd9
https://doi.org/10.1063/1.106332
https://doi.org/10.1063/1.106332
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1392
The causes for variations in quantum efficiency (QE) for boron‐implanted midwave infrared diodes formed in mercury cadmium telluride on CdTe buffered GaAs/Si substrates have been investigated. Smooth layers have QE≳30% with many of the diodes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f00dbf20df0fe13606b2a0b6dfe11c50
https://doi.org/10.1116/1.585874
https://doi.org/10.1116/1.585874
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1587
While HgCdTe has been used extensively to fabricate high performance photodiodes and focal plane arrays, little has been done to apply this technology to light emitting devices. We recently succeeded in fabricating and operating the first HgCdTediode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ebd7a6f4cd973d6dbe51a798aa271f9
https://doi.org/10.1116/1.586253
https://doi.org/10.1116/1.586253