Zobrazeno 1 - 10
of 15
pro vyhledávání: '"R. U. A. Khan"'
Publikováno v:
Thin Solid Films. 515:3061-3064
We report on the growth and microstructural analysis of molecularly ordered thin film layers of aluminum tris-(8-hydroxyquinoline) (Alq3) by hot-wall deposition onto amorphous glass substrates. Using transmission electron microscopy (TEM), ordering o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::936416773e41e3abf0a4e518622e83af
https://doi.org/10.1016/j.tsf.2006.08.028
https://doi.org/10.1016/j.tsf.2006.08.028
Publikováno v:
Journal of materials science. Materials in electronics, 17 (6)
Journal of materials science. Materials in electronics, 17 (6)
ISSN:0957-4522
ISSN:1573-482X
ISSN:0957-4522
ISSN:1573-482X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04f3213802e82e7911f6a99b4d008379
https://doi.org/10.1007/s10854-006-8093-8
https://doi.org/10.1007/s10854-006-8093-8
Publikováno v:
Diamond and Related Materials. 10:993-997
Electron paramagnetic resonance (EPR) measurements have been made of defects in amorphous hydrogenated carbon (a-C:H) thin films. The films were grown on silicon substrates on the earthed electrode of an rf-powered plasma enhanced chemical vapour dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d55ec3d8aa6a74afe5279044bed8db
https://doi.org/10.1016/s0925-9635(00)00364-2
https://doi.org/10.1016/s0925-9635(00)00364-2
Autor:
R. U. A. Khan, S. R. P. Silva
Publikováno v:
Diamond and Related Materials. 10:1036-1039
Amorphous hydrogenated carbon (a-C:H) has been extensively researched as an electronic material. In this study, a-C:H is implanted with boron ions at a dose of 2×1015 cm−2. It is observed that the current versus voltage shows a number of distinct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1fccc8c947049d2834ffc9546a8fb9
https://doi.org/10.1016/s0925-9635(00)00368-x
https://doi.org/10.1016/s0925-9635(00)00368-x
Publikováno v:
Scopus-Elsevier
Films with paramagnetic defect density ∼1017 cm−3 of hydrogenated amorphous carbon (a-C:H) and nitrogenated and hydrogenated amorphous carbon (a-C:H:N) were grown on an earthed electrode of a radio-frequency (RF) driven plasma enhanced chemical v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad0d52314c57a11d5746369230b6cdd3
https://doi.org/10.1016/s0022-3093(99)00952-7
https://doi.org/10.1016/s0022-3093(99)00952-7
Autor:
S. R. P. Silva, R. U. A. Khan
Publikováno v:
International Journal of Modern Physics B. 14:195-205
The electronic conduction mechanism occuring in amorphous thin films is quite complicated. In amorphous carbon films it is further exacerbated by the rich diversity of its microstructure as well as the large number of gap states present in the films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::181ce766129067e880ff103a6a279149
https://doi.org/10.1142/s0217979200000194
https://doi.org/10.1142/s0217979200000194
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 24(43)
The decay time of luminescence from neutral nitrogen-vacancy (NV(0)) centres in synthetic diamond is reported. The intrinsic luminescence lifetime of NV (0) is measured as τ(r) = 19 ± 2 ns. Neutral substitutional nitrogen atoms (N(S)(0)) are shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7549601f0c7037b8f4b774140a253516
https://pubmed.ncbi.nlm.nih.gov/23032562
https://pubmed.ncbi.nlm.nih.gov/23032562
Publikováno v:
Mäki, J M, Tuomisto, F, Varpula, A, Fisher, D, Khan, R U A & Martineau, P M 2011, ' Time dependence of charge transfer processes in diamond studied with positrons ', Physical Review Letters, vol. 107, no. 21, 217403 . https://doi.org/10.1103/PhysRevLett.107.217403
We have developed a method called optical transient positron spectroscopy and apply it to study the optically induced carrier trapping and charge transfer processes in natural brown type IIa diamond. By measuring the positron lifetime with continuous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f487451df0cc708e5a20cbebf73cdb02
https://cris.vtt.fi/en/publications/325c98be-fda9-49ec-8c05-1042c7f7f01f
https://cris.vtt.fi/en/publications/325c98be-fda9-49ec-8c05-1042c7f7f01f
Autor:
R. U. A. Khan, S. R. P. Silva
Here, we will discuss the electrical transport processes that occur within thin films of polymeric amorphous carbon, which possess a high resistivity of 1015 Ω cm, a Tauc band gap of 2.6 eV, and a low defect density of 1017 spins cm−3. Using curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d222da8c8322bf5fad48b636c73ea90
https://surrey.eprints-hosting.org/2538/
https://surrey.eprints-hosting.org/2538/
Publikováno v:
Applied Physics Letters, 82 (22), 2003
Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdb27818a0a7fddc32b4d16c7572be39
https://doi.org/10.1063/1.1580636
https://doi.org/10.1063/1.1580636