Zobrazeno 1 - 10
of 27
pro vyhledávání: '"R. Tolutis"'
Autor:
Saulius Balevicius, R. Tolutis
Publikováno v:
physica status solidi (a). 206:293-297
Substantial influence of uniaxial stretch S and compression P on resistivity ρ and magnetoresistance (MR) of high-quality polycrystalline Bi films consisting of up to 200 μm length crystallites was observed. The investigated 1.5 μm thick films wer
Autor:
R. Tolutis
Publikováno v:
Lithuanian Journal of Physics. 49:189-195
Large inuence of uniaxial stretch (strain) S and compression P on transverse and perpendicular resistivity ‰ and magnetoresistance (MR) of polycrystalline n-Bi lms was investigated. The calculations were performed on the basis of polycrystalline Bi
Autor:
R. Tolutis
Publikováno v:
Lithuanian Journal of Physics. 46:469-474
The large longitudinal magnetoresistance (MR) of high quality uniaxially deformed 1.5 „m thick polycrystalline bismuth lms deposited in vacuum on non-crystalline substrate and annealed at critical temperatures was investigated. The experimental res
Publikováno v:
Lithuanian Journal of Physics. 45:53-57
The magnetoresistance (MR), sheet resistance (R ), and structure of vacuum-deposited thin bismuth films with 0.3 to 1.5 μm thickness prepared on noncrystalline dielectric amorphous substrate were investigated as a function of substrate (TS) and anne
Negative magnetoresistance of polycrystalline thin Bi1 xSbxalloy films in quantizing magnetic fields
Publikováno v:
Semiconductor Science and Technology. 18:430-433
We have investigated the magnetoresistance of thin polycrystalline semiconductor Bi1−xSbx films prepared on a flat fibreglass substrate at a temperature of 77 K using pulsed magnetic fields up to 50 T. For these investigations we used films exposed
Autor:
O. Kiprianovič, Saulius Balevicius, R. Tolutis, Evaldas E. Tornau, F. Anisimovas, V. Pyragas, Bonifacas Vengalis, Jurij Novickij
Publikováno v:
Journal of Magnetism and Magnetic Materials. 211:243-247
The resistance response to high magnetic field pulses of 20–40 T was studied for thin films of La 0.67 Ca 0.33 MnO 3 with different magnetic properties. The relaxation curves of the response dynamics were obtained for temperature range 77–300 K.
Autor:
R. Tolutis, A. Sutkus
Publikováno v:
physica status solidi (a). 173:417-424
The influence of the L-band nonparabolicity and the energy dependent carrier scattering time on the anisotropy of electrical conductivity in uniaxially deformed thin polycrystalline Bi and Bi 1-x Sb x alloy films was investigated. It has been shown t
Autor:
O. Kiprianovič, Jurij Novickij, Evaldas E. Tornau, Saulius Balevicius, V. Pyragas, F. Anisimovas, R. Tolutis, Bonifacas Vengalis
Publikováno v:
Journal of Low Temperature Physics. 117:1653-1657
The resistance relaxation after switch-off of high magnetic field pulses of 20-40 T was studied for two series of La0.67Ca0.33MnO3thin films. The response dynamics was obtained for temperature range 77-300 K. It is shown that the relaxation time is s
Autor:
V. Tolutis, R. Tolutis
Publikováno v:
Physica Status Solidi (a). 157:65-73
The anisotropy of the electrical conductivity and the electrical piezoeffect due to this anisotropy is found in a uniaxially deformed thin polycrystalline Bi film. The symmetrical and antisymmetrical parts of the nondiagonal elements of the conductiv
Autor:
R. Tolutis
Publikováno v:
physica status solidi (b). 185:439-446
The strong electrical piezoeffect caused by the deformation induced anisotropy of electron mobility in Bi1−xSbx semiconducting samples is described. Attention is drawn to the piezoeffect voltage, high in undoped samples, its nonsymmetric change und