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pro vyhledávání: '"R. T. Syme"'
Autor:
R. T. Syme
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 354:2351-2364
Semiconductor tunnel devices can be used as mixers or detectors of microwaves and two examples are given in this paper. First, single-barrier tunnel detector diodes are described and their performance is compared with conventional devices at frequenc
Publikováno v:
Semiconductor Science and Technology. 8:1483-1486
The authors have performed detailed investigations of an asymmetrically doped GaAs/AlAs/GaAs tunnel diode in which a 2D accumulation layer forms at the emitter/barrier interface under forward bias. The systematic application of hydrostatic pressure a
Autor:
R T Syme
Publikováno v:
Semiconductor Science and Technology. 7:71-74
Resonant tunnelling diodes for device applications often have to contain very heavily doped contact regions. When the doping is so high, there is a substantial degree of auto-compensation of the dopant, and the impurity band merges with the conductio
Autor:
Michael Pepper, G. A. C. Jones, David A. Ritchie, H. Asahi, R. T. Syme, V. J. Law, J. E. F. Frost, M. Tewordt, Michael Kelly
Publikováno v:
Surface Science. 267:388-391
We have studied electron transport in GaAs/AlGaAs triple barrier diodes with diameters to down d ≈ 200 nm. At and below d ≈ 2 μ m, we observe fine structure in the main resonant tunneling peaks. The period and amplitude appear to be independent
Publikováno v:
Physical Review Letters. 66:1622-1625
Autor:
Michael Kelly, G. A. C. Jones, R. H. Hughes, H. Asahi, J. E. F. Frost, M. Tewordt, R. T. Syme, V. J. Law, A. C. Churchill, David A. Ritchie
Publikováno v:
Applied Physics Letters. 60:595-597
Resonant tunneling in GaAs‐AlGaAs triple barrier diodes is studied as a function of the diode diameter between d=8 μm and d=100 nm. We observe, only in the very small diodes, a novel spikelike fine structure in the current‐voltage characteristic
Autor:
R. T. Syme, R. Newbury, W. M. Stobbs, Michael Kelly, G. A. C. Jones, V. J. Law, J. E. F. Frost, David A. Ritchie, M. Tewordt, Michael Pepper
Publikováno v:
Applied Physics Letters. 59:1966-1968
We have investigated the lifetimes of electron states in the quantum wells of GaAs‐AlGaAs resonant tunneling diodes with diameters down to 200 nm, as a function of the barrier thickness. The times were extracted from the magnitude of steps observed
Autor:
H. Asahi, Michael Pepper, R. T. Syme, M. Tewordt, V. J. Law, D. R. Mace, Michael Kelly, David A. Ritchie, J. E. F. Frost, G. A. C. Jones
Publikováno v:
Applied Physics Letters. 59:803-805
Electron transport is studied in GaAs/AlGaAs asymmetric triple‐barrier resonant tunneling structures in a high magnetic field perpendicular to the interfaces. Besides the resonance peaks arising from tunneling between two quantum wells, a series of
Autor:
R. T. Syme, Michael Pepper
Publikováno v:
Journal of Physics: Condensed Matter. 1:2747-2753
The authors have measured the conductivity and thermopower of silicon-on-sapphire MOSFETs at low temperatures as a function of perpendicular and parallel magnetic fields. The magnitude of the thermopower was found to decrease for perpendicular fields
Publikováno v:
Journal of Physics: Condensed Matter. 1:3375-3380
The temperature decay along a silicon inversion layer, heated at one end by a DC current, has been measured at liquid helium temperatures by using the electron gas as its own thermometer. The decay profile was obtained by solving the heat diffusion e