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pro vyhledávání: '"R. T. Rashid"'
Autor:
S. Zhao, S. Y. Woo, S. M. Sadaf, Y. Wu, A. Pofelski, D. A. Laleyan, R. T. Rashid, Y. Wang, G. A. Botton, Z. Mi
Publikováno v:
APL Materials, Vol 4, Iss 8, Pp 086115-086115-7 (2016)
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wave
Externí odkaz:
https://doaj.org/article/c66d0357a6394193a6cabebd77268f70
