Zobrazeno 1 - 10
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pro vyhledávání: '"R. T. Phillips"'
Autor:
R. T. Phillips
Publikováno v:
Modern Asian Studies. 42:733-750
The Japanese invasion of Rehe in 1933 proved to be a walkover, despite the intense rhetoric of resistance which had characterised statements by leaders in north China in early 1933. This article looks at the local context of the governorship of Tang
Publikováno v:
physica status solidi (b). 238:601-606
We have studied, by 'micro-magneto-photoluminescence', the eigenstates of excitons localised in the interfacial potential of narrow GaAs/Al 0.31 Ga 0.69 As quantum wells. These behave in many respects as quantum dot excitons, and give narrow emission
Exciton g-Factors, Diamagnetic Shifts, and Exchange Splittings in Quantum Dots in GaAs Quantum Wells
Autor:
R. T. Phillips, A.G. Steffan
Publikováno v:
physica status solidi (a). 190:541-545
Excitons localised in the random interfacial potential that occurs naturally in GaAs quantum wells (QWs) have been studied. The states are those of random quantum dots (QDs), and give narrow, homogeneously broadened photoluminescence emission lines;
Publikováno v:
physica status solidi (a). 190:615-623
The spin-dependent exciton-exciton interactions in GaAs quantum well (QW) systems have been studied, under resonant and non-resonant excitation conditions at liquid helium temperatures. In the former case, a pure exciton gas is created, whereas in th
Autor:
R. T. Phillips
Publikováno v:
China Information. 21:347-349
Autor:
R. T. Phillips, S. Grosse, Jouni Ahopelto, Markku Sopanen, Harri Lipsanen, Jochen Feldmann, G. von Plessen, G. Hayes, J. H. H. Sandmann
Publikováno v:
physica status solidi (b). 204:251-254
We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of hig
Publikováno v:
Journal of Applied Physics. 82:3214-3218
The structure of the optical phase change memory alloy, silver–vanadium–indium–antimony–tellurium (AVIST), has been investigated by the methods of optical reflectivity change, Raman spectroscopy, and electron diffraction. In order to identify
Autor:
R. T. Phillips, P. Etchegoin
Publikováno v:
Physical Review E. 55:5603-5612
We study two different effects intimately related to the existence of a third-order nonlinear optical susceptibility x (3) in a nematic liquid crystal. We first present data and calculations on stimulated orientational scattering and show that it can
Autor:
G R Hayes, R T Phillips
Publikováno v:
Journal of Physics: Condensed Matter. 6:7589-7601
The cooling of a hot electron-hole plasma in In0.53Ga0.47As is studied by means of an analytical model. It is assumed that the carriers are thermalized at different effective temperatures and their distributions are of a Fermi-Dirac form from the sho
Publikováno v:
Semiconductor Science and Technology. 9:526-529
We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for excitons in a number of multiple quantum well samples. Our specimens were selected with ba