Zobrazeno 1 - 10
of 931
pro vyhledávání: '"R. T. Mo"'
Autor:
X. Sun, C. D'Emic, C.-W. Cheng, A. Majumdar, Y. Sun, E. Cartier, R. L. Bruce, M. Frank, H. Miyazoe, K.-T. Shiu, S. Lee, J. Rozen, J. Patel, T. Ando, W.-B. Song, M. Lofaro, M. Krishnan, B. Obrodovic, K.-T. Lee, H. Tsai, W.-E. Wang, W. Spratt, K. Chan, J.-B. Yau, P. Hashemi, M. Khojasteh, M. Cantoro, J. Ott, T. Rakshit, Y. Zhu, D. Sadana, C.-C. Yeh, V. Narayanan, R. T. Mo, Y.-C. Heo, D.-W. Kim, M. S. Rodder, E. Leobandung
Publikováno v:
2017 Symposium on VLSI Technology.
We report the fabrication of short-channel FinFETs on InGaAs-on-silicon wafers using the aspect ratio trapping (ART) technique. We demonstrate excellent short-channel control down to 20 nm gate length due to scaled fin width down to 9 nm and reductio
Publikováno v:
GCCE
Assistive automobile and infortainment systems have been fitted as standard equipment in most modern medium to high end motor vehicles. While these system offer numerous advantages to consumers in enhancing operability and driving safety, there is li
Autor:
Jin Cai, Sebastian Engelmann, Jeng-Bang Yau, Christopher P. D'Emic, Joonah Yoon, Dae-Gyu Park, R. T. Mo, K.K. Chan, Tak H. Ning
Publikováno v:
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
We report the first demonstration of thin-base symmetric lateral NPN bipolar transistors built on 8-inch SiGe-on-insulator (SiGe-OI) wafers with CMOS-like process. Such devices achieve the same collector current as the SOI bipolar transistor at ∼13
Publikováno v:
Chaos; May2021, Vol. 31 Issue 5, p1-10, 10p
Autor:
Hoyer-Leitzel, Alanna, N Nadeau, Alice
Publikováno v:
Chaos; Jul2021, Vol. 31 Issue 7, p1-1, 1p
Toward determining amyloid fibril structures using experimental constraints from Raman spectroscopy.
Autor:
Harper, Madeline, Nudurupati, Uma, Workman, Riley J., Lakoba, Taras I., Perez, Nicholas, Nelson, Delaney, Ou, Yangguang, Punihaole, David
Publikováno v:
Journal of Chemical Physics; 12/14/2023, Vol. 159 Issue 22, p1-16, 16p
Publikováno v:
Journal of Chemical Physics; 12/7/2023, Vol. 159 Issue 21, p1-13, 13p
Autor:
EKUNDAYO, AYOBAMI, AMINU, ENESI FEMI, SALIU, WINIFRED OMONE, OJERINDE, OLUWASEUN ADENIYI, UGWUOKE, UCHENNA COSMAS
Publikováno v:
i-Manager's Journal on Data Science & Big Data Analytics (JDS); Dec2024, Vol. 2 Issue 2, p1-19, 19p
Publikováno v:
Journal of Applied Physics; 9/28/2023, Vol. 134 Issue 12, p1-9, 9p
Publikováno v:
Journal of Applied Physics; 8/21/2023, Vol. 134 Issue 7, p1-12, 12p