Zobrazeno 1 - 10
of 13
pro vyhledávání: '"R. T. Laaksonen"'
Publikováno v:
ECS Transactions. 4:401-408
The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61d467ebf3faf32012a53a288196041
https://doi.org/10.1149/1.2813515
https://doi.org/10.1149/1.2813515
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2483-2489
We report on the characterization of silicon-rich nitride (SRN) and silicon-rich oxynitride (SRON) films used in poly-Si gate patterning. SRON and SRN films were deposited by plasma-enhanced chemical vapor deposition in a commercial 200 mm reactor. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d723df5b03fe9c7e32c57d118515a9c
https://doi.org/10.1116/1.1388624
https://doi.org/10.1116/1.1388624
Autor:
Richard E. Smalley, J. Conceicao, Ting Guo, Lai-Sheng Wang, R. T. Laaksonen, Peter Nordlander
Publikováno v:
Physical Review B. 51:4668-4671
The photoelectron spectra and the reactivity of ${\mathrm{H}}_{2}$ with Fe, Co, and Ni clusters have been studied as a function of cluster size for clusters ranging from 5 to 26 atoms in size. It is shown that the variation of the reactivity correlat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0381f67a1390871b79212ae33178e16c
https://doi.org/10.1103/physrevb.51.4668
https://doi.org/10.1103/physrevb.51.4668
Publikováno v:
Review of Scientific Instruments. 65:2267-2275
We have developed an apparatus that produces an ionized beam of mass selected clusters of controllable energy. It uses a pulse of second‐harmonic light from a Nd:YAG laser to vaporize atoms from a target disk. The clustering rate of the atoms in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8184e6e8aca245940307f28c8c6d2f
https://doi.org/10.1063/1.1144675
https://doi.org/10.1063/1.1144675
Publikováno v:
ChemInform. 22
Silicon clusters in the size range from 5 to 66 atoms were generated by laser vaporization in a supersonic nozzle and injected into the ion trap of a specially‐designed Fourier transform ion cyclotron resonance apparatus. On the positively charged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e2c8952c9699f402ed38df65633d3f
https://doi.org/10.1002/chin.199127025
https://doi.org/10.1002/chin.199127025
Autor:
L. Lou, R. T. Laaksonen, Peter Nordlander, Richard E. Smalley, Lihong V. Wang, L. P. F. Chibante
Publikováno v:
ChemInform. 22
The electronic structure of small Ga_xAs_y clusters (x+y≤10) are calculated using the local density method. The calculation shows that even‐numbered clusters tend to be singlets, as opposed to odd‐numbered clusters which are open shell systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c88180a3fe06fb5e83a96d7e66c6f0
https://doi.org/10.1002/chin.199138003
https://doi.org/10.1002/chin.199138003
Publikováno v:
The Journal of Chemical Physics. 94:2618-2630
Silicon clusters in the size range from 5 to 66 atoms were generated by laser vaporization in a supersonic nozzle and injected into the ion trap of a specially‐designed Fourier transform ion cyclotron resonance apparatus. On the positively charged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a66403385a27498e2d8d40e6487641
https://doi.org/10.1063/1.459838
https://doi.org/10.1063/1.459838
Autor:
Rajesh Khamankar, Lancy Tsung, Mark R. Visokay, M. Douglas, A. Shanware, Luigi Colombo, M. J. Bevan, R. T. Laaksonen, R. Kuan, Tad Grider, Haowen Bu, J. McPherson, James J. Chambers, Antonio L. P. Rotondaro
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
We report for the first time on short channel transistors fabricated using HfSiON, a new high-k gate dielectric material. HfSiON has superior electrical characteristics such as low leakage current relative to SiO/sub 2/, low interfacial trap density,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e5c8ec14031857e428673f9341b6f3a
https://doi.org/10.1109/vlsit.2002.1015428
https://doi.org/10.1109/vlsit.2002.1015428
Autor:
Richard E. Smalley, L. P. F. Chibante, R. T. Laaksonen, Peter Nordlander, Lihong V. Wang, L. Lou
The electronic structure of small Ga_xAs_y clusters (x+y≤10) are calculated using the local density method. The calculation shows that even‐numbered clusters tend to be singlets, as opposed to odd‐numbered clusters which are open shell systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f6137971e719e5a79aaae4ea82ac9a8
https://resolver.caltech.edu/CaltechAUTHORS:20170314-083237273
https://resolver.caltech.edu/CaltechAUTHORS:20170314-083237273
Publikováno v:
The Journal of Chemical Physics. 88:5215-5224
Reaction rates and saturation values were determined for H2 dissociative chemisorption on positive niobium cluster ions in an FT‐ICR apparatus. Clusters with 8,10,12, and 16 atoms were found to be particularly unreactive, in remarkable agreement wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd82a7a69f57ff7c8562287cf559aedc
https://doi.org/10.1063/1.454596
https://doi.org/10.1063/1.454596