Zobrazeno 1 - 10
of 28
pro vyhledávání: '"R. T. Graff"'
Autor:
Adam M. Conway, Art J. Nelson, R. T. Graff, Vincenzo Lordi, E. L. Swanberg, S.A. Payne, Lars F. Voss, Rebecca J. Nikolic, Joel B. Varley
Publikováno v:
physica status solidi (b). 252:1266-1271
Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the im
Autor:
Lars F. Voss, S.A. Payne, Rebecca J. Nikolic, Ted A. Laurence, P. R. Beck, Art J. Nelson, R. T. Graff, Leonard J. Cirignano, Kanai S. Shah, Hadong Kim, Adam M. Conway
Publikováno v:
IEEE Transactions on Nuclear Science. 60:1231-1236
Thallium bromide (TlBr) is a material of interest for use in room temperature gamma ray detector applications due to is wide bandgap 2.7 eV and high average atomic number (Tl 81, Br 35). Researchers have achieved energy resolutions of 1.3% at 662 keV
Autor:
Rebecca J. Nikolic, Adam M. Conway, R. T. Graff, Arnold Burger, Art J. Nelson, S.A. Payne, Henry Chen, P. R. Beck, Lars F. Voss
Publikováno v:
IEEE Transactions on Nuclear Science. 60:1208-1212
CdZnTe-based gamma detectors require a reduction of electronic noise contributed by apparent device and surface leakage current, especially for advanced readout schemes such as the Co-planar Grid or Pixelated Grid. In this work, we describe a combina
Autor:
Lars F. Voss, R. T. Graff, Rebecca J. Nikolic, Chin Li Cheung, Qinghui Shao, Catherine Reinhardt, Adam M. Conway, N. Deo
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:916-920
Two planarization techniques for high aspect ratio three dimensional pillar structured p-i-n diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structure
Autor:
Rebecca J. Nikolic, N. Deo, Adam M. Conway, Lars F. Voss, Chin Li \\'Barry\\' Cheung, R. T. Graff, C. E. Reinhardt
Publikováno v:
Journal of Electronic Materials. 39:263-267
Isotopically enriched 10boron for use in pillar-structured neutron detectors was successfully etched in an electron cyclotron resonance (ECR) plasma using SF6-based plasmas. The effects of radio frequency (RF) power, ECR power, gas flow rate, H2 and
Publikováno v:
Journal of Micromechanics and Microengineering. 17:S237-S242
A reformed methanol fuel cell system is described. The use of a microfluidic fuel processor enables component scaling and integration sufficient to achieve power sources in the 2–10 W regime that are competitive in size and energy density in compar
Autor:
Lars F. Voss, Kanai S. Shah, William Koehler, R. T. Graff, Adam M. Conway, S.A. Payne, Art J. Nelson, E. L. Swanberg, Hadong Kim, Leonard J. Cirignano, Zhong He, Sean O'Neal
Publikováno v:
2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC).
Due to its wide band gap (2.68 eV) and high stopping power, thallium bromide (TlBr) is being investigated as a room-temperature semiconductor gamma-ray spectrometer. When cooled to −20°C, performance of better than 1% FWHM at 662 keV has been obse
Autor:
Leonard J. Cirignano, S.A. Payne, K.S. Shah, Lars F. Voss, R. T. Graff, Hadong Kim, E. L. Swanberg, Art J. Nelson, Rebecca J. Nikolic, Adam M. Conway
Publikováno v:
SPIE Proceedings.
Degradation of room temperature operation of TlBr radiation detectors with time is thought to be due to electromigration of Tl and Br vacancies within the crystal as well as the metal contacts migrating into the TlBr crystal itself due to electrochem
Autor:
Rebecca J. Nikolic, Art J. Nelson, Lars F. Voss, Vincenzo Lordi, E. L. Swanberg, R. T. Graff, Adam M. Conway, Joel B. Varley, S.A. Payne
Publikováno v:
physica status solidi (b). 252
Publikováno v:
IEEE Electron Device Letters. 34:1226-1228
A modified Bosch process is used to reduce leakage current resulting from surface damage and roughness for high aspect ratio pillars fabricated from Si p-i-n structures. C4F8 is used during both the etch and passivation steps to achieve a scallop-fre