Zobrazeno 1 - 9
of 9
pro vyhledávání: '"R. T. Crosby"'
Publikováno v:
Materials Science in Semiconductor Processing. 10:1-5
B-doped Si 0.77 Ge 0.23 of various surface-doping levels was used to investigate the evolution of implant damage and the corresponding transient enhanced diffusion of boron as a function of boron concentration. These layers were implanted with a non-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a31203453814ccdcf694446bf1bf24
https://doi.org/10.1016/j.mssp.2007.01.002
https://doi.org/10.1016/j.mssp.2007.01.002
Publikováno v:
Materials Science in Semiconductor Processing. 6:205-208
Molecular beam epitaxial (MBE), unstrained Si 1− x Ge x layers of various Ge concentrations, ranging from 0% to 50%, were grown on top of a 〈1 0 0〉 Si substrate. The wafers were subjected to a 10 keV, 1×10 14 cm −2 Si + non-amorphizing impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::219e05f56fd5b1bcff26a06d532234e8
https://doi.org/10.1016/s1369-8001(03)00087-8
https://doi.org/10.1016/s1369-8001(03)00087-8
Autor:
Mark E. Law, M.S. Phen, Kevin S. Jones, Arne Nylandsted Larsen, John Lundsgaard Hansen, R. T. Crosby, Valentin Craciun
Publikováno v:
MRS Proceedings. 864
The relaxation process of strained silicon films on silicon-rich relaxed SiGe alloys has been studied. Experimental structures were grown via Molecular Beam Epitaxy (MBE) growth techniques and contain a strained silicon capping layer approximately 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1b4e0944e687e9d785f251fd3f54e1
https://doi.org/10.1557/proc-864-e4.28
https://doi.org/10.1557/proc-864-e4.28
Autor:
M. Klimov, J. Liu, Valentin Craciun, Phillip E. Thompson, Kevin S. Jones, R. T. Crosby, Ljubo Radic, Mark E. Law
Publikováno v:
MRS Proceedings. 810
The relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd7d018080a8d4a765bd89b17f0da0b5
https://doi.org/10.1557/proc-810-c7.4
https://doi.org/10.1557/proc-810-c7.4
Autor:
J. Liu, Kevin S. Jones, A. F. Saavedra, Arne Nylandsted Larsen, J. L. Hansen, Mark E. Law, R. T. Crosby
Publikováno v:
MRS Proceedings. 810
The relaxation processes of strained silicon films on silicon-rich relaxed SiGe alloys have been studied. Experimental structures were generated via Molecular Beam Epitaxial (MBE) growth techniques and contain a strained silicon capping layer of appr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a21c539835eecc42a1bd58adaa93ce98
https://doi.org/10.1557/proc-810-c4.12
https://doi.org/10.1557/proc-810-c4.12
Autor:
Kevin S. Jones, Mark E. Law, Mark W. Clark, Kevin A. Gable, Ljubo Radic, R. T. Crosby, Carrie E. Ross
Publikováno v:
MRS Proceedings. 810
As device lots become more and more expensive, process modeling is increasingly important. Process simulation and modeling is increasingly sophisticated but the accuracy remains a problem. There is generally a time lag between the introduction of a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb25746901ab6dcf75aac1be79cd64e
https://doi.org/10.1557/proc-810-c3.1
https://doi.org/10.1557/proc-810-c3.1
Autor:
Kevin S. Jones, R. T. Crosby, Jackie Frazer, A. Nylandsted Larsen, J. Lundsgaard Hansen, Mark E. Law
Publikováno v:
MRS Proceedings. 717
Molecular beam epitaxial Si1-xGex layers of various Ge concentrations ranging from 0% to 50% were grown on top of a Si substrate. The wafers were then implanted with a 40 keV, 1 x 1014cm-2 Si+. To study the development of {311} defects, the samples w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f22ccdb30115f311d815137bd18ec738
https://doi.org/10.1557/proc-717-c1.6
https://doi.org/10.1557/proc-717-c1.6
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:2333
Ultrashallow p+ junctions are required for next generation electronics. We present a technique for the formation of ultrashallow p+ junctions that increases the thermal stability of the junctions formed by either epitaxy or ion implantation. By using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b10fd7c5b8ff0d6ae876ce7895bcba9
https://doi.org/10.1116/1.1784825
https://doi.org/10.1116/1.1784825
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:468
Si-implanted, unstrained Si1−xGex layers of various Ge concentrations ranging from 0% to 50% were grown by molecular beam epitaxy on top of a Si substrate. The samples were subjected to a 750 °C anneal for 180 min to explore the subsequent defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60317b52a86c79ae7f13d996b6cf3f85
https://doi.org/10.1116/1.1619423
https://doi.org/10.1116/1.1619423