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pro vyhledávání: '"R. Surdeanu"'
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Publikováno v:
Acta chirurgica Belgica.
In the case of Roux-en-Y gastric bypass with a long afferent limb, the need to carry out an ERCP still represents a technical challenge. In this article we describe the case of a 50-year-old male admitted to the ER for abdominal pain in the right upp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f134b8e2a0b7fc27ebd69c6f18e77e70
https://pubmed.ncbi.nlm.nih.gov/27397034
https://pubmed.ncbi.nlm.nih.gov/27397034
Autor:
Malgorzata Jurczak, M. Masahara, F. Neuilly, Liesbeth Witters, Serge Biesemans, E. Suzuki, Christa Vrancken, R. Surdeanu, Katia Devriendt, V.H. Nguyen, G. Van den bosch, Eddy Kunnen, G. Doornbos
Publikováno v:
Microelectronic Engineering. 84:2097-2100
Flexibly controllable threshold voltage (V"t"h) asymmetric gate oxide thickness (T"o"x) independent double-gate (DG) FinFETs (4T-FinFETs) have been demonstrated. Thin drive-gate oxide (HfO"2 or SiON or SiO"2) and slightly thick V"t"h-control-gate oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abc10484f53a634250135d32668b96a2
https://doi.org/10.1016/j.mee.2007.04.033
https://doi.org/10.1016/j.mee.2007.04.033
Autor:
V.H. Nguyen, R. Surdeanu, Serge Biesemans, Malgorzata Jurczak, F. Neuilly, Liesbeth Witters, Katia Devriendt, M. Masahara, Christa Vrancken, G. Van den bosch, Eddy Kunnen, G. Doornbos
Publikováno v:
IEEE Electron Device Letters. 28:217-219
Flexibly controllable threshold-voltage (Vth) asymmetric gate-oxide thickness (Tox) four-terminal (4T) FinFETs with HfO2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO2+thick SiO2 (EOT=6.4-9.4 nm) for the Vth-control gate have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e97298f35a4ba58cb33e4e7d1495f42
https://doi.org/10.1109/led.2007.891303
https://doi.org/10.1109/led.2007.891303
Autor:
Christa Vrancken, V.H. Nguyen, M. Masahara, Serge Biesemans, Eiichi Suzuki, Malgorzata Jurczak, G. Doornbos, G. Van den bosch, Y. X. Liu, Liesbeth Witters, R. Surdeanu, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'uchi
Publikováno v:
ResearcherID
One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to overcome the issue of catastrophic increases in power consumption due to short-channel effects (SCEs). Fortunately, "independent" double-gate (DG) FinFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aac38304df8fed3aaa41840479baddc
https://doi.org/10.1109/icicdt.2007.4299542
https://doi.org/10.1109/icicdt.2007.4299542
Autor:
Josine Loo, R. Ng, M.J.H.van Dal, Phillip Christie, Bartlomiej Jan Pawlak, R. Surdeanu, V. H. Nguyen, Youri Victorovitch Ponomarev, Gerben Doornbos
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cdb60e45fdd225328b293a1bcab9705
https://doi.org/10.7567/ssdm.2005.c-8-4
https://doi.org/10.7567/ssdm.2005.c-8-4
Autor:
Stefan Kubicek, Richard Lindsay, F.N. Cubaynes, C.J.J. Dachs, Z.M. Rittersma, J.C. Hooker, Josine Loo, Gerben Doornbos, Kirklen Henson, R. J. P. Lander, Youri Victorovitch Ponomarev, R. Surdeanu
Publikováno v:
Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710).
A CMOS process is developed in a research environment for integration studies of sub-50 nm MOSFETs with high-k (HiK) dielectrics, metal gates (MG), ultra-shallow junctions with laser thermal annealing (LTA), raised source/drain (RSD) and novel device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84eb6a8fa471d0341ea0788c1a513a3
https://doi.org/10.1109/essderc.2003.1256802
https://doi.org/10.1109/essderc.2003.1256802
Autor:
Jeroen Croon, E. Augendre, F.R.J. Huisman, R.M.D.A. Velghe, K.N. Sreerambhatla, Youri Victorovitch Ponomarev, L.P. Bellefroid, M.N. Webster, M. Da Rold, E. Seevinck, Ray Duffy, M.J.B. Bolt, R.F.M. Roes, A.T.A. Zegers-van Duijnhoven, R. Surdeanu, M. Vertregt, Hans Tuinhout, A.J. Moonen, Peter Stolk, N.K.J. van Winkelhoff, C.J.J. Dachs
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This paper studies the suitability of CMOS device technology for mixed-signal applications. The currently proposed scaling scenario's for CMOS technologies lead to strong degradation of analog transistor performance. As a result the combined optimiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f377a49c742ede27965176cd3b9e48c
https://doi.org/10.1109/iedm.2001.979469
https://doi.org/10.1109/iedm.2001.979469
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
The limits of using B or BF2 alone in forming ultrashallow junctions have been reached for the 90 nm CMOS generation. In this paper we evaluate the use of Ge and F co-implants to extend conventional implantation and spike anneal to the 65 nm CMOS tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767222e6d8b703cee0842a36f53817f6
https://doi.org/10.1109/iit.2002.1257928
https://doi.org/10.1109/iit.2002.1257928
Autor:
D. McK. Paul, Sebastian S. James, Eli Zeldov, N. Saha, Charles Dewhurst, R. Surdeanu, Yossi Paltiel
Publikováno v:
Rare Earth Transition Metal Borocarbides (Nitrides): Superconducting, Magnetic and Normal State Properties ISBN: 9780792368793
We present local Hall probe and magneto-optical imaging measurements used to examine vortex pinning and dynamics in two of the magnetic borocarbide superconductors, ErNi2B2C (T c ≈ 10.8K) and HoNi2B2C (T c ≈ 8.9K), and compare with that obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff7a495909775d297e856d30f48e3b1
https://doi.org/10.1007/978-94-010-0763-4_37
https://doi.org/10.1007/978-94-010-0763-4_37
