Zobrazeno 1 - 10
of 131
pro vyhledávání: '"R. Strenz"'
Publikováno v:
Physica B: Condensed Matter. 227:6-10
Resonant ineleastic light scattering is used to study collective and single-particle excitations in GaAs/AlGaAs based quantum wires and quantum dots. Interlevel transitions show a significant blue shift with decreasing confinement length. These excit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763ec932665cc4d3935fd075fd419a6c
https://doi.org/10.1016/0921-4526(96)00319-5
https://doi.org/10.1016/0921-4526(96)00319-5
Autor:
G. Böhm, Gert Schedelbeck, G. Weimann, E. Silveira, R. Strenz, U. Bockelmann, Gerhard Abstreiter
Publikováno v:
Surface Science. :783-787
Resonant inelastic light scattering was used to investigate both charge density excitations and spin density excitations in shallow etched GaAsAl/GaAs quantum wires. A semi-transparent Schottky gate was evaporated on top of the samples which allowed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6919506feb52d46bb88f4a7437323ff0
https://doi.org/10.1016/0039-6028(96)00533-x
https://doi.org/10.1016/0039-6028(96)00533-x
Publikováno v:
Solid-State Electronics. 40:333-337
We report measurements of electronic excitations in the confinement regime between one and two dimensions. FIR transmission spectroscopy has been successfully used to detect two-dimensional plasmons dispersion, localized plasmons and depolarization s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c19db5c146473d9301b8a9eee0cb3a9
https://doi.org/10.1016/0038-1101(95)00323-1
https://doi.org/10.1016/0038-1101(95)00323-1
Autor:
Christian Wetzel, R. Strenz, G. Weimann, Bruno K. Meyer, F. Hirler, Gerhard Abstreiter, M. Drechsler, G. Böhm, D. M. Hofmann
Publikováno v:
Physical Review B. 52:11313-11318
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1427d42170371e36c62ed22616fc21b
https://doi.org/10.1103/physrevb.52.11313
https://doi.org/10.1103/physrevb.52.11313
Publikováno v:
Physical Review B. 51:5554-5557
Time-resolved photoluminescence studies have been performed on shallow etched wires prepared from remote-doped GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wells. A fast decay is observed for the dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::027c2107241cfddab0b7e22b72eb288d
https://doi.org/10.1103/physrevb.51.5554
https://doi.org/10.1103/physrevb.51.5554
Publikováno v:
Physical Review Letters. 73:3022-3025
Resonant inelastic light scattering is used to probe electronic excitations in shallow etched GaAs/AlGaAs quantum dots and wires. In both types of structures, intersubband excitations are observed in depolarized scattering geometries. They show signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a12a39c5a1582be631e027c6735efa4
https://doi.org/10.1103/physrevlett.73.3022
https://doi.org/10.1103/physrevlett.73.3022
Publikováno v:
Semiconductor Science and Technology. 9:399-403
Resonant Raman scattering and FIR transmission spectroscopy is used to detect confined plasmons in shallow etched GaAs/AlGaAs single quantum well wires. Different samples with varying period lengths and wire widths are investigated. The lateral poten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d0e6c4c4279c64b067258fc7661a40
https://doi.org/10.1088/0268-1242/9/4/011
https://doi.org/10.1088/0268-1242/9/4/011
Publikováno v:
Surface Science. 305:591-596
Shallow etched wires, dots and antidots have been prepared from remote-doped GaAs AlGaAs quantum wells. The luminescence of electrons and holes separated into adjacent lateral regions was studied with a magnetic field applied in the growth direction.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20a751f1b5878c6c1ddd418b0a4764bf
https://doi.org/10.1016/0039-6028(94)90959-8
https://doi.org/10.1016/0039-6028(94)90959-8
Autor:
G. Tränkle, G. Weimann, R. Strenz, Jürgen Smoliner, R. Küchler, F. Hirler, Gerhard Abstreiter, G. Böhm
Publikováno v:
Surface Science. 263:536-540
Electrons and photoexcited holes are separated into adjacent quantum wires in remote doped GaAs/AlGaAs quantum wells, using a shallow etching technique. This spatial separation results in a drastic change of the photoluminescence lineshape and an add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570305621b09d085297ab4996dbb4899
https://doi.org/10.1016/0039-6028(92)90403-s
https://doi.org/10.1016/0039-6028(92)90403-s
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Scaling limitations on NVM Stacked gate embedded into high-performance (HP) CMOS logic process will be reviewed with potential solutions identified. As technology continues its shrink path into 65 nm and beyond, scaling is becoming challenged due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec8d1123ad5a222375eb073fd9da2a6d
https://doi.org/10.1109/icsict.2008.4734670
https://doi.org/10.1109/icsict.2008.4734670