Zobrazeno 1 - 10
of 23
pro vyhledávání: '"R. Stibal"'
Autor:
J. Luft, S. Müller, R. Stibal, K. Sporrer, J. L. Weyher, W. Späth, M. Baeumler, W. Jantz, G. Herrmann
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a24422c06f2be97225b8eae79da6bd0
https://doi.org/10.1201/9781315140810-95
https://doi.org/10.1201/9781315140810-95
Publikováno v:
physica status solidi (c). :1013-1018
Semi-insulating silicon carbide single crystals have been grown using high temperature chemical vapor deposition without vanadium doping. The resistivity of standard and exploratory 2″ diameter substrates has been analysed topographically with 1 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ace375698c7066898c0db430d724eb2e
https://doi.org/10.1002/pssc.200306237
https://doi.org/10.1002/pssc.200306237
Publikováno v:
Journal of Crystal Growth. 210:207-211
The modification of the bulk resistivity of semi-insulating GaAs caused by incorporation of copper has been studied. Wafers cut from an ingot annealed, intentionally Cu contaminated LEC grown crystal were investigated optically and electrically. A ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af676e008ac19c997ab7009fa80c4f0
https://doi.org/10.1016/s0022-0248(99)00680-6
https://doi.org/10.1016/s0022-0248(99)00680-6
Publikováno v:
Materials Science and Engineering: B. 66:21-25
The lateral homogeneity of the electrical resistivity p of semi-insulating GaAs substrates is measured with high resolution using contactless capacitive mapping. The improved technique is capable of imaging mesoscopic p fluctuations correlated with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fe1cc61db5622361660115f3215b6d5
https://doi.org/10.1016/s0921-5107(99)00094-x
https://doi.org/10.1016/s0921-5107(99)00094-x
Autor:
Oliver Ambacher, Matthias Seelmann-Eggebert, Rudolf Kiefer, Thomas Maier, Michael Mikulla, Michael Schlechtweg, Manfred Thumm, Rudiger Quay, Jutta Kuhn, Wolfgang Bronner, F. van Raay, R. Stibal
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
This paper describes the design and realization of efficient GaN/AlGaN MMICs for X-band frequencies (8–12 GHz) in microstrip- transmission-line-technology on 3-inch s.i.SiC substrates. Four dual-stage MMICs are designed and realized based on differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b3d9e78b6d0e72bffb4053be45dd15d
https://doi.org/10.1109/mwsym.2009.5165783
https://doi.org/10.1109/mwsym.2009.5165783
Publikováno v:
Semiconductor Science and Technology. 6:995-1001
A method based on time-dependent measurement of charge transients has been developed to evaluate the specific resistivity of semi-insulating wafers quickly, non-destructively and with good lateral resolution. The material is inserted between capaciti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce39824cd6f2b652a95af3ec5487b732
https://doi.org/10.1088/0268-1242/6/10/008
https://doi.org/10.1088/0268-1242/6/10/008
Publikováno v:
Applied Surface Science. 50:480-484
The variation of material properties along the growth axis of single crystal LEC GaAs ingots is studied. Parameters investigated include concentration and lateral variation of EL2, photoluminescence intensity, resistivity, the concentration of extrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9a7a95465e5fabab6b1ecfa5ed53099
https://doi.org/10.1016/0169-4332(91)90222-6
https://doi.org/10.1016/0169-4332(91)90222-6
Autor:
R. Stibal, H. Essen, S. Stanko, R. Sommer, M. Kuri, Hermann Massler, M. Zink, Michael Schlechtweg, Arnulf Leuther, Axel Tessmann, W. Reinert, M. Riessle
Publikováno v:
2006 European Microwave Integrated Circuits Conference.
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b4278d9d1e41507d9d985890145b199
https://doi.org/10.1109/emicc.2006.282770
https://doi.org/10.1109/emicc.2006.282770
Publikováno v:
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).
The mesoscopic inhomogeneity of LEC grown semi-insulating (SI) GaAs wafers has been investigated with EL2/spl deg/ absorption topography (EAT), photoluminescence topography (PLT), point contact topography (PCT) and contactless resistivity mapping (CO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad15072df6d9fd2794c87bc0ce84e0f0
https://doi.org/10.1109/sim.1998.785068
https://doi.org/10.1109/sim.1998.785068
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
The capacitive charge transient measurement technique generates laterally resolved two-dimensional resistivity topograms of wafers with diameters up to 150 mm. The method is applicable to semi-insulating substrates with resistivities between 10/sup 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fab80eac9e1a74cd82e8f0fa9d48b2
https://doi.org/10.1109/sim.1992.752695
https://doi.org/10.1109/sim.1992.752695