Zobrazeno 1 - 10
of 132
pro vyhledávání: '"R. Sooriyakumaran"'
Autor:
R. Sooriyakumaran, Hiroshi Ito, Hoa Trung, Simone Raoux, Dolores C. Miller, Ann R. Fornof, Mark W. Hart, Frances A. Houle
Publikováno v:
Journal of Photopolymer Science and Technology. 21:563-572
In UV cure nanoimprint lithography the interfaces as well as the resist composition play an important role in determining the characteristics of the resulting patterned material, which can be used for subsequent pattern transfer, or be functional. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f4a7d07c512cb233f875944531101c
https://doi.org/10.2494/photopolymer.21.563
https://doi.org/10.2494/photopolymer.21.563
Publikováno v:
Macromolecules. 40:7505-7512
A photochemical path for formation of volatile S and acidolytic paths for formation of volatile Si and/or C during exposure to ultraviolet light have been identified for two silicon-containing bilayer photoresists using atmospheric pressure ionizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7feadc82b08099c3f7b122f8a319dc8b
https://doi.org/10.1021/ma070781p
https://doi.org/10.1021/ma070781p
Autor:
Linda K. Sundberg, Daniel P. Sanders, A. D. Allen, R. Sooriyakumaran, R. A. Dipietro, P. J. Brock, Gregory Breyta
Publikováno v:
Journal of Photopolymer Science and Technology. 19:569-572
The fundamental properties of a series of hexafluoroalcohol-bearing methacrylate polymers (HFA-MA) are reported here. The material behavior is heavily influenced by the linking group between the methacrylate ester (or polymer backbone) and the hexafl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed915a5d4c62b6781d6138f470158a1
https://doi.org/10.2494/photopolymer.19.569
https://doi.org/10.2494/photopolymer.19.569
Autor:
Mahmoud Khojasteh, Margaret C. Lawson, Gary Dabbagh, Linda K. Sundberg, Y. Nishiyama, Kuang-Jung J. Chen, Tsutomu Shimokawa, M. Siezak, Takashi Chiba, P. J. Brock, Ranee Wai-Ling Kwong, R. Sooriyakumaran, Wai-kin Li, P. R. Varanasi, Robert D. Allen, Kaushal Patel, Z. Liu
Publikováno v:
Journal of Photopolymer Science and Technology. 18:381-387
We have designed and developed a variety of hexafluoroalcohol (HFA) pendant methacrylate monomers and the corresponding imaging polymers for ArF lithography. It was found that HFA side chains are critical for "swelling free" dissolution properties fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc926f2dd071180a830aa55c0c13920
https://doi.org/10.2494/photopolymer.18.381
https://doi.org/10.2494/photopolymer.18.381
Autor:
Linda K. Sundberg, Martha I. Sanchez, Yoshio Kawai, Amy E. Zweber, T. Senna, Keiichi Masunaga, Joseph L. Malenfant, I. Yoshida, Luisa D. Bozano, R. Bowley, Satoshi Watanabe, R. Sooriyakumaran, T. Isogawa, Y. Sakamoto, T. Komizo, Tom Faure, Steven C. Nash, M. Tanabe, M. Kagawa
Publikováno v:
SPIE Proceedings.
The critical layer masks for 14 nm and 10 nm logic nodes are typically bright field, and the key features are opaque structures on the mask. In order to meet the tight critical dimension (CD) requirements on these opaque features the use of a high qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba208a027d1dca190e2a9c7b4cadf903
https://doi.org/10.1117/12.2069031
https://doi.org/10.1117/12.2069031
Autor:
R. Sooriyakumaran, James W. Taylor, John P. Simons, Marie Angelopoulos, G. W. Reynolds, Arpan P. Mahorowala, D. R. Medeiros, K. Petrillo, D. Hofer, Katherina Babich, Qinghuang Lin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1411-1419
Thin film imaging offers the possibility of extending 248 nm lithography to sub 150 nm resolution. We have been working on a 248 nm bilayer imaging scheme which utilizes a thin Si-containing resist on top of a thick, planarizing underlayer. The image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad724955b4eadb1343e7efdf1277a648
https://doi.org/10.1116/1.582363
https://doi.org/10.1116/1.582363
Autor:
R. Sooriyakumaran, Greg Breyta, Andrew E. Pomerantz, Charlie Dalby, Rikiya Sato, Hiroshi Ito, Kip Guy, Mark H. Sherwood
Publikováno v:
Macromolecules. 33:5080-5089
Monomer reactivity ratios in radical copolymerization of 4-hydroxystyrene derivatives with tert-butyl acrylate and methacrylate have been determined by nonlinear regression as well as by the Kelen−Tudos graphic method. The hydroxystyrene derivative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e5f945a2c3886a9e69c27567d740c1
https://doi.org/10.1021/ma9919357
https://doi.org/10.1021/ma9919357
Autor:
Gregory Breyta, R. Sooriyakumaran, Carl E. Larson, Qinghuang Lin, Karen Petrillo, Marie Angelopoulos, Juliann Opitz, Gregory M. Wallraff, D. LaTulip, Katherina Babich, John P. Simons, R. A. Dipietro, Mark H. Sherwood, Donald C. Hofer, Debra Fenzel-Alexander, J. Muete
Publikováno v:
Journal of Photopolymer Science and Technology. 11:673-679
Thin film imaging resists (TSI and Bilayer systems) confine the imaging to a thin resist film (in the case of a bilayer system) which is subsequently transferred to a thicker polymeric underlayer. This approach has a number of potential advantages in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f8debc9c158a786adb50850114d5d5
https://doi.org/10.2494/photopolymer.11.673
https://doi.org/10.2494/photopolymer.11.673
Autor:
T. Komizo, Amy E. Zweber, I. Yoshida, Linda K. Sundberg, T. Senna, R. Sooriyakumaran, Luisa D. Bozano, M. Tanabe, Martha I. Sanchez, Daniel P. Sanders
Publikováno v:
SPIE Proceedings.
Resist materials rely on solubility differences between the exposed and unexposed areas to create the desired image. Most negative-tone resists achieve the solubility difference by crosslinking the exposed area causing it to be insoluble in developer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa6749451992ec04771ab973c5844c7
https://doi.org/10.1117/12.2028753
https://doi.org/10.1117/12.2028753
Autor:
Kim Y. Lee, Wu-Song Huang, Mahmoud Khojasteh, R. Sooriyakumaran, Mark D. Denison, Dominic Changwon Yang, James F. Cameron, Roger F. Sinta, George W. Orsula, George Joseph Hefferon, Ahmad D. Katnani, Rao Bantu, Ranee Kwong, Jim Thackeray, Bill Brunsvold
Publikováno v:
Journal of Photopolymer Science and Technology. 8:525-534
An environmentally stable resist with high contrast, sensitivity and resolution is presented. Delay stability in excess of 24hr. has been achieved with insignificant change in linewidth. The resist also demonstrates extreme insensitivity to PEB, show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f223b2c3e7c7200a31d5c1626f1d800f
https://doi.org/10.2494/photopolymer.8.525
https://doi.org/10.2494/photopolymer.8.525