Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning

Autor: Steven Consiglio, Qingyun Yang, K. Tapily, Saraf Iqbal Rashid, Muthumanickam Sankarapandian, Paul C. Jamison, Tsunomura Takaaki, C. Catano, Robert D. Clark, T. Ando, R. Pujari, Vijay Narayanan, Hisashi Higuchi, Gerrit J. Leusink, Malte J. Rasch, R. Soave, Hongwen Yan, Ernest Y. Wu, Dexin Kong, Aelan Mosden, Peter Biolsi, Youngseok Kim, Robert R. Robison, O. van der Straten, D. Koty, S. McDermott, Soon-Cheon Seo, Hiroyuki Miyazoe, Son Nguyen, A. Gasasira, Nicole Saulnier, Wilfried Haensch, Sebastian Engelmann, C. S. Wajda, Ramachandran Muralidhar, S. DeVries

Publikováno v: IEEE Electron Device Letters. 42:759-762

We demonstrate a novel process for building a Resistive RAM (ReRAM) stack which reduces the forming voltage ( $\text{V}_{\textit {form}}$ ) and increases the switching resistance, both characteristics that are important ingredients for the use of ReR

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe9d72aa9eb14d75aff72c197a0ef723
https://doi.org/10.1109/led.2021.3066181

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Handbook Chemical and Biological Waste Management

Autor: F. Benolli, V. Dal Santo, S. Econdi, C. Evangelisti, A. M. Ferretti, M. Guidotti, L. Polito, M. C. Ranghieri, R. Soave

Publikováno v: Milano: Istituto di Scienze e Tecnologie Molecolari (ISTM), CNR, 2019
info:cnr-pdr/source/autori:F. Benolli, V. Dal Santo, S. Econdi, C. Evangelisti, A. M. Ferretti, M. Guidotti, L. Polito, M. C. Ranghieri, R. Soave/titolo:Handbook Chemical and Biological Waste Management/editore: /anno:2019

For the CBRN Centres of Excellence Project 65 "Strengthening chemical and biological waste management in Central Asia countries for improved security and safety risk mitigation", implemented by Military Institute of Chemistry and Radiometry, Fondazio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::08bd09885eba5fcbee096fca945a5c2e
http://www.cabichem.eu

Antiferromagnetic junctions: the model case of Cr wires

Autor: M. Bragato, M. Cantoni, M. Asa, S. Achilli, F. Cargnoni, D. Ceresoli, R. Soave, M.I. Trioni

Publikováno v: AB-INITIO SPIN-ORBITRONICS, Montesilvano, Pescara, ITALY, September 25th-29th, 2017
info:cnr-pdr/source/autori:M. Bragato, M. Cantoni, M. Asa, S. Achilli, F. Cargnoni, D. Ceresoli, R. Soave, M.I. Trioni/congresso_nome:AB-INITIO SPIN-ORBITRONICS/congresso_luogo:Montesilvano, Pescara, ITALY/congresso_data:September 25th-29th, 2017/anno:2017/pagina_da:/pagina_a:/intervallo_pagine

Antiferromagnetic systems have been intensively studied for technological purposes, as they can represent an alternative to conventional devices based on giant-magneto resistance (GMR) to Tunneling Magnetoresistance (TMR) effects. As a matter of fact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::50c606b464a25dac30e41d77b767cc11
https://publications.cnr.it/doc/381671