Zobrazeno 1 - 10
of 30
pro vyhledávání: '"R. Skrotzki"'
Autor:
V Heera, J Fiedler, R Hübner, B Schmidt, M Voelskow, W Skorupa, R Skrotzki, T Herrmannsdörfer, J Wosnitza, M Helm
Publikováno v:
New Journal of Physics, Vol 15, Iss 8, p 083022 (2013)
Si films sputter deposited on thermally oxidized Si are enriched with Ga by ion implantation through a SiO _2 capping layer. The morphology and the electrical transport properties of these films are investigated after rapid thermal annealing. Amorpho
Externí odkaz:
https://doaj.org/article/a9f53012037446a1aa69d48eb84a0d3c
Autor:
R. Skrotzki, Thomas Herrmannsdörfer, Martin Heise, Joachim Wosnitza, Anett Grigas, Daniel Köhler, Regine Boldt, Stefan Kaskel, Anna Isaeva, Michael Ruck
Publikováno v:
Zeitschrift für anorganische und allgemeine Chemie. 638:2035-2043
Uniform nanocrystals of the intermetallic compounds Bi2Ir (diameter ≥ 50 nm) and Bi3Ni (typical size 200 × 600 nm) were obtained by a microwave-assisted polyol process at 240 °C. The method was also applied to the spatially confined reaction envi
Autor:
Wolfgang Skorupa, Karl-Heinz Heinig, Helfried Reuther, Gerhard Gobsch, V. Heera, R. Skrotzki, Arndt Mücklich, Stefan Facsko, Manfred Helm, J. Fiedler, M. Voelskow, Thomas Herrmannsdörfer, M. Perego, B. Schmidt
Publikováno v:
Physical Review B. 85
Autor:
V. Heera, Gerhard Gobsch, M. Voelskow, Thomas Herrmannsdörfer, Manfred Helm, Arndt Mücklich, R. Skrotzki, Wolfgang Skorupa, Steffen Oswald, J. Wosnitza, J. Fiedler, B. Schmidt
Publikováno v:
Physical Review B. 83
Autor:
Regine Boldt, R. Skrotzki, Denny Köhler, Michael Ruck, Jochen Wosnitza, Thomas Herrmannsdörfer
Publikováno v:
Physical Review B. 83
We demonstrate the coexistence of superconductivity and ferromagnetism in Bi${}_{3}$Ni nanostructures that have been prepared by making use of novel chemical-reaction paths. We have characterized their magnetic and superconducting properties by means
Autor:
C. Wündisch, Wolfgang Skorupa, R. Skrotzki, Matthias Posselt, Bernd Schmidt, Arndt Mücklich, Thomas Herrmannsdörfer, Karl-Heinz Heinig, M. Voelskow, V. Heera
Publikováno v:
Journal of Applied Physics 107(2010), 053508-1-053508-8
Heavily p-type doped Ge layers were fabricated by 100 keV Ga implantation and subsequent flash lamp annealing for 3 ms in the temperature range between 700°C and 900°C. For comparison some samples were annealed in a rapid thermal processor for 60 s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b455e0130e2f417781345788f3f7838
https://www.hzdr.de/publications/Publ-13321-1
https://www.hzdr.de/publications/Publ-13321-1
Autor:
Karl-Heinz Heinig, J. Wosnitza, Marc Uhlarz, R. Skrotzki, A. Mücklich, W. Skorupa, M. Voelskow, H. Reuther, T. Herrmannsdörfer, Manfred Helm, C. Wündisch, O. Ignatchik, Bernd Schmidt, V. Heera, Matthias Posselt
Publikováno v:
Physical Review Letters 102(2009), 217003
We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure. Using advanced doping and annealing techniques of state-of-the-art semiconductor processing, we have fabricated a highly Ga-dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35f33566e02d8e04a03ac608aa373237
https://www.hzdr.de/publications/Publ-12939-1
https://www.hzdr.de/publications/Publ-12939-1
Autor:
Wolfgang Skorupa, R. Skrotzki, L Wilde, Manfred Helm, V. Heera, Thomas Herrmannsdörfer, J. Wosnitza, Marcel Naumann, J. Fiedler, S Kölling
Publikováno v:
Superconductor Science and Technology. 27:055025
Ge films with a mean Ga content of about 8 and 1 at.% hole concentration can be fabricated by ion implantation and subsequent flash-lamp annealing. The Ge:Ga films become superconducting below critical temperatures in the range between 1 and 2 K depe
Autor:
Bernd Schmidt, Wolfgang Skorupa, J. Wosnitza, J. Fiedler, R. Skrotzki, René Hübner, V. Heera, Thomas Herrmannsdörfer, Matthias Voelskow, Manfred Helm
Publikováno v:
New Journal of Physics. 15:083022
Si films sputter deposited on thermally oxidized Si are enriched with Ga by ion implantation through a SiO2 capping layer. The morphology and the electrical transport properties of these films are investigated after rapid thermal annealing. Amorphous
Autor:
Wolfgang Skorupa, V. Heera, M. Voelskow, Arndt Mücklich, R. Skrotzki, Thomas Herrmannsdörfer, J. Fiedler
Publikováno v:
Applied Physics Letters 100(2012), 262602
Heavily Ga implanted Si nanolayers covered with a thin SiO2 layer exhibit a superconductor-insulator transition in dependence on annealing conditions. The transition characteristics resemble those of ultrathin quench-condensed metal films although th