Zobrazeno 1 - 10
of 24
pro vyhledávání: '"R. Simonton"'
Autor:
Lourdes Pelaz, D. J. Eaglesham, S. B. Herner, Dale Conrad Jacobson, R. Simonton, H.-J. Gossmann, Aditya Agarwal, T. E. Haynes
Publikováno v:
Materials Science in Semiconductor Processing. 1:17-25
Continued use of ion implantation for doping of silicon integrated circuits will soon require implantation energies below 5 keV to form electrical junctions less than 50 nm deep. At such low energies, dopant diffusion and formation of extended defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ff03eb7c4e48a15b9a9663b32e7a3c
https://doi.org/10.1016/s1369-8001(98)00008-0
https://doi.org/10.1016/s1369-8001(98)00008-0
Autor:
M. Puga-Lambers, David S. Simons, J. Bernstein, R. Simonton, Knut Möller, Mladen Petravic, Jau-Jiun Chen, Robert Elliman, B. Freer, Leonard M. Rubin, Kevin S. Jones, M. Law, Peter H. Chi, P. Kringhoj
In the Si IC industry today all highly doped, ion implanted regions were amorphized at one point. Upon annealing, it has generally been believed that dopant in the regrown silicon does not show any enhanced diffusion. The accepted model was that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ec20ee6302085c8b40ef2a3e1d4ffcb
https://www.bib.irb.hr/463249
https://www.bib.irb.hr/463249
Autor:
Al F. Tasch, S. Morris, S. Tian, M. Morris, R. Simonton, K. Parab, S.-H. Yang, D. Kamenitsa, C. Magee, B. Obradovich
Publikováno v:
MRS Proceedings. 396
With increasing levels of integration, future generations of integrated circuit technology will require extremely shallow dopant profiles. Ion implantation has long been used in semiconductor material processing and will be a vitally important techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e6e7a7b086263e00e4585d5ca83e1d
https://doi.org/10.1557/proc-396-769
https://doi.org/10.1557/proc-396-769
Autor:
D. Kamenitsa, Al F. Tasch, R. Simonton, K.B. Parab, Charles W. Magee, S. Tian, S.-H. Yang, S. J. Morris
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:260
Deep submicron (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b592d9a106b8d17c9911570b422ee8f
https://doi.org/10.1116/1.588458
https://doi.org/10.1116/1.588458
Publikováno v:
Medicine & Science in Sports & Exercise. 24:603
The purpose of this study was to examine the effectiveness of weight-belts during multiple repetitions of the parallel back squat exercise. Five subjects were filmed (50 fps) as they performed eight consecutive trials at each of two weight-belt condi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aa511d47455e5beefa371eb14c1d854
https://doi.org/10.1249/00005768-199205000-00015
https://doi.org/10.1249/00005768-199205000-00015
Publikováno v:
Annals of Human Biology. 4:281-284
Three human transferrin variants verified by rivanol precipitation were separated using vertical block polyacrylamide gel electrophoresis followed by elution convection. A bacteriostatic inhibition measurement in vitro of the three transferrins was m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61addf903605693baabf2f884d41eee1
https://doi.org/10.1080/03014467700007172
https://doi.org/10.1080/03014467700007172
Autor:
A. Agarwal, T. E. Haynes, D. J. Eaglesham, H.-J. Gossmann, Lourdes Pelaz, S. B. Herner, Yu. E. Erokhin, R. Simonton, Dale Conrad Jacobson
Publikováno v:
Scopus-Elsevier
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93a6230628bbc923b4c24b6a5959f002
http://www.scopus.com/inward/record.url?eid=2-s2.0-84886448005&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84886448005&partnerID=MN8TOARS
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